IC DRAM 512MBIT PARALLEL 66TSOP
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 66-TSOP
IC DRAM 512MBIT PARALLEL 66TSOP Product overview: MT46V32M16P-5B:J from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V32M16P-5B:J
Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 700ps
Family Name: MT46V32M16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 66-TSOP
Supply Voltage - Operating: 2.5 V to 2.7 V
Memory Format: DRAM
Max Frequency: 200MHz
Alternative Parts (Cross-Reference): K4H511638J-LCCC000; HYB25D512160DE-5; K4H511638F-LCCC;
Introduction Date: October 27, 2000
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP
DDR1 DRAM, 32MX16, 0.7NS, CMOS, TSOP-66. FREE 2 YEAR RADWELL WARRANTY
TSOP-66-10.2mm DDR SDRAM ROHS
DRAM, 32M X 16BIT, 0 TO 70DEG C; DRAM Type:DDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:200MHz; Memory Case Style:TSOP; No. of Pins:66Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes
DRAM, DDR, 512MBIT, 0 TO 70DEG C ROHS COMPLIANT: YES
IC DRAM 512MBIT PARALLEL 66TSOP
IC DRAM 512MBIT PARALLEL 66TSOP
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Radwell International | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46V32M16P-5B:J | MT46V32M16P-5B:J-ND | 774-MT46V32M16P-5B:J | MT46V32M16P-5B:J | 109049163 | MT46V32M16P-5B:J | 80AH8112 | 91AH7961 | MT46V32M16P-5B:J | MT46V32M16P-5B:J | |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - SDRAM - MT46V32M16P-5B:J | Memory | Memory IC | Memory >> DDR SDRAM | Dram, 32M X 16Bit, 0 To 70Deg C; Dram Type Micron | Dram, Ddr, 512Mbit, 0 To 70Deg C Rohs Compliant Micron | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SDRAM - DDR; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 200 MHz | 200 MHz | |||||||||
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 5 ns | 0.7000 ns | |||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||||||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
