SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 66-TSOP
Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 700ps
Family Name: MT46V32M16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 66-TSOP
Supply Voltage - Operating: 2.5 V to 2.7 V
Memory Format: DRAM
Max Frequency: 200MHz
Alternative Parts (Cross-Reference): K4H511638J-LCCC000; HYB25D512160DE-5; K4H511638F-LCCC;
Introduction Date: October 27, 2000
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
IC DRAM 512MBIT PARALLEL 66TSOP Product overview: MT46V32M16P-5B:J from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V32M16P-5B:J
IC DRAM 512MBIT PARALLEL 66TSOP
DDR1 DRAM, 32MX16, 0.7NS, CMOS, TSOP-66. FREE 2 YEAR RADWELL WARRANTY
IC DRAM 512MBIT PARALLEL 66TSOP
IC DRAM 512MBIT PARALLEL 66TSOP
DRAM, 32M X 16BIT, 0 TO 70DEG C; DRAM Type:DDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:200MHz; Memory Case Style:TSOP; No. of Pins:66Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes
DRAM, DDR, 512MBIT, 0 TO 70DEG C ROHS COMPLIANT: YES
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP
TSOP-66-10.2mm DDR SDRAM ROHS
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Radwell International | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Quarktwin Technology Ltd. | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46V32M16P-5B:J-ND | 774-MT46V32M16P-5B:J | MT46V32M16P-5B:J | 109049163 | MT46V32M16P-5B:J | MT46V32M16P-5B:J | 80AH8112 | 91AH7961 | MT46V32M16P-5B:J | MT46V32M16P-5B:J | |
| Product Name | Memory | Memory - SDRAM - MT46V32M16P-5B:J | Memory IC and Storage Component | Memory | Memory IC | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 32M X 16Bit, 0 To 70Deg C; Dram Type Micron | Dram, Ddr, 512Mbit, 0 To 70Deg C Rohs Compliant Micron | Memory | Memory >> DDR SDRAM |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | SDRAM - DDR; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||||||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | ||||
| Package Type | TSSOP; "66-TSSOP (0.400"", 10.16mm Width)" | SOP; 66-TSOP | TSSOP; Tray | 66-TSSOP (0.400", 10.16mm Width) | TSOP | SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width) | TSOP | ||||
| Supply Voltage | 2.5V ~ 2.7V | 2.5 V ~ 2.7 V | 2.5V ~ 2.7V | 2.5V ~ 2.7V | 66-TSSOP (0.400, 10.16mm Width) | 2.5V ~ 2.7V |
