Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 5.0ns
Family Name: MT46H128M16
Categories: Integrated Circuits
Supplier Device Package: 60-VFBGA (8x9)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Manufacturer Package: 60-VFBGA
Introduction Date: January 20, 2017
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,782
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V
SDRAM - Mobile LPDDR Memory IC 2Gb (128M x 16) Parallel 208MHz 5ns 60-VFBGA (8x9)
IC DRAM 2GBIT PAR 208MHZ 60VFBGA Product overview: MT46H128M16LFDD-48 IT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H128M16LFDD-
DRAM, 128M X 16BIT, -40 TO 85DEG C; DRAM Type:LPDDR; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:208MHz; Memory Case Style:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:4.8ns RoHS Compliant: Yes
IC DRAM 2GBIT PARALLEL 60VFBGA
IC DRAM 2GBIT PAR 208MHZ 60VFBGA
IC DRAM 2GBIT PARALLEL 60VFBGA
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 60-VFBGA (8x9)
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46H128M16LFDD-48IT:C-ND | 774-MT46H128M16LFDD-48 IT:C | 80AH8081 | MT46H128M16LFDD-48 IT:C | MT46H128M16LFDD-48 IT:C | MT46H128M16LFDD-48 IT:C | MT46H128M16LFDD-48 IT:C | |
| Product Name | Memory - SDRAM - MT46H128M16LFDD-48 IT:C | Memory | 208MHZ Memory IC and Storage Component | Dram, 128M X 16Bit, -40 To 85Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | SDRAM - Mobile LPDDR; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 4.8 ns | 5 ns | 5 ns | 5 ns | ||
| Cycle Time | 14.4 ns | 14.4 ns | 14.4 ns | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Supply Voltage | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | -40degC ~ 85degC (TA) | 1.7V ~ 1.95V |
