NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA114ET
Features and benefits
Applications
PDTC114E series - NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TO-236 3-Pin Product overview: PDTC114ET,235 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTC114ET,235 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087202-PDTC114ET,23
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 230MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB
TRANS PREBIAS NPN 50V TO236AB
TRANS PREBIAS NPN 250MW TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PDTC114ET,235 | 292-PDTC114ET,235 | 1087202-PDTC114ET,235 | 1727-6420-6-ND | PDTC114ET,235 | PDTC114ET,235 |
| Product Name | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC114ET,235 | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single, Pre-Biased Bipolar Transistors |
| Package Type | SOT23; SOT23 SOT23 | SOT3; TO-236AB (SOT23) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Transistor Grade / Operating Range | Industrial; Automotive | |||||
| Polarity | NPN; NPN - Pre-Biased | NPN | NPN - Pre-Biased; NPN | |||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
