Nexperia B.V. PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open PDTA123TMB,315

Description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
  • PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open - PDTA123TMB,315 - Nexperia B.V.
    Nexperia B.V.
  • Single, Pre-Biased Bipolar Transistors - 1727-PDTA123TMB,315DKR-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PDTA123TMB,315TR-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PDTA123TMB,315CT-ND - DigiKey
    DigiKey
  • Rf Transistor Rohs Compliant Nexperia - 29AK3039 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote
Datasheet
Datasheet Summary
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PNP resistor-equipped transistor with built-in bias resistor R1 = 2.2 kΩ and R2 open, in a leadless DFN1006B-3 (SOT883B) package measuring 1.0 × 0.6 × 0.37 mm. Maximum collector-emitter voltage is -50 V, collector current is -100 mA, and total power dissipation is 250 mW at 25 °C. Junction temperature rating is 150 °C. The device is AEC-Q101 qualified.

Datasheet Summary
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PNP resistor-equipped transistor with built-in bias resistor R1 = 2.2 kΩ and R2 open, in a leadless DFN1006B-3 (SOT883B) package measuring 1.0 × 0.6 × 0.37 mm. Maximum collector-emitter voltage is -50 V, collector current is -100 mA, and total power dissipation is 250 mW at 25 °C. Junction temperature rating is 150 °C. The device is AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open - PDTA123TMB,315 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
PDTA123TMB,315
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open PDTA123TMB,315
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123TMB.

Features and benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • Leadless ultra small SMD plastic package
  • Low package height of 0.37 mm
  • AEC-Q101 qualified

Applications

  • Low-current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
  • Mobile applications
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTA123TMB,315DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTA123TMB,315DKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTA123TMB,315DKR-ND
TRANS PREBIAS PNP 50V 0.1A 3DFN

TRANS PREBIAS PNP 50V 0.1A 3DFN

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTA123TMB,315TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTA123TMB,315TR-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTA123TMB,315TR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTA123TMB,315CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTA123TMB,315CT-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTA123TMB,315CT-ND
TRANS PREBIAS PNP 50V 0.1A 3DFN

TRANS PREBIAS PNP 50V 0.1A 3DFN

Buy Now Datasheet
Rf Transistor Rohs Compliant Nexperia - 29AK3039 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK3039
Rf Transistor Rohs Compliant Nexperia 29AK3039
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company
Product Category Transistors Transistors RF Transistors
Product Number PDTA123TMB,315 1727-PDTA123TMB,315DKR-ND 29AK3039
Product Name PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Single, Pre-Biased Bipolar Transistors Rf Transistor Rohs Compliant Nexperia
Package Type SOT883B SOT883B 3-XFDFN TO-3
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