PNP low VCEsat transistor in a small SOT23 (TO-236AB) surface-mounted plastic package, measuring 2.9 mm x 1.3 mm x 1 mm, with a collector-emitter voltage rating of -40 V, a continuous collector current of -2 A, and a peak collector current of -3 A. Base-emitter saturation voltage is up to -1.1 V at -2 A collector current and -200 mA base current. Collector-emitter saturation resistance is 140 to 220 mΩ at -500 mA collector current and -50 mA base current. Junction temperature range is -65 °C to 150 °C, with total power dissipation of 300 mW on a standard footprint or 480 mW with a 1 cm² collector pad. Thermal resistance from junction to ambient is 260 K/W with an enhanced collector pad. NPN complement is PBSS4240T.
PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4240T
Features and benefits
Applications
PBSS5240T - 40 V, 2 A PNP low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS5240T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 40 V, 2 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5240T,215 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 40V 2A 200MHz 480mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 40V 2A 200MHz 480mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 40V 2A 200MHz 480mW Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086510-PBSS5240T,21
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 350mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 210 @ 1A, 2V
Maximum Power Dissipation: 480mW
Alternative Parts (Cross-Reference): DSS5240T-7; PBSS5240T/DG; NSS40200L;
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
40V 480mW 210@1A,2V 2A PNP SOT-23 Bipolar Transistors - BJT ROHS
Bipolar (BJT) Single Transistor, PNP, -40 V, 200 MHz, 300 mW, -2 A, 450 RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, PNP, 40 V, 200 MHz, 300 mW, 2 A, 450 RoHS Compliant: Yes
TRANS PNP 40V 2A TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS5240T,215 | 276-PBSS5240T,215 | 1727-3908-6-ND | 1086510-PBSS5240T,215 | PBSS5240T,215 | 93X4543 | PBSS5240T,215 |
| Product Name | 40 V, 2 A PNP low VCEsat transistor | 40 V 2 A Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - PBSS5240T,215 | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Bipolar (Bjt) Single Transistor, Pnp, -40 V, 200 Mhz, 300 Mw, -2 A, 450 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; TO-236AB (SOT23) | SOT23 | TO-3 | ||
| Polarity | PNP | PNP; PNP | PNP | PNP | |||
| IC(max) | 2000 milliamps | 2000 milliamps | |||||
| VCEO | 40 volts | 40 volts |
