Nexperia B.V. 40 V, 5 A PNP low VCEsat transistor PBSS5540X,135

Description
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device(SMD) plastic package. NPN complement: PBSS4540X Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Medium power driver (e.g. relays, buzzers and motors)
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Description
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device(SMD) plastic package. NPN complement: PBSS4540X Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Medium power driver (e.g. relays, buzzers and motors)
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat transistor in a SOT89 package measuring 4.5 mm x 2.5 mm x 1.5 mm, rated for a maximum collector-emitter voltage of -40 V, continuous collector current of -4 A, and peak collector current of -10 A. Collector-emitter saturation voltage is specified as low as 340 mV at -4 A and -200 mA base current. The device has a collector-emitter saturation resistance of 45 to 75 mΩ at -5 A and -500 mA base current, and a maximum total power dissipation of 2.5 W under pulsed conditions with Tamb ≤ 25 °C. Junction temperature rating is 150 °C. It is not automotive qualified.

Datasheet Summary
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PNP low VCEsat transistor in a SOT89 package measuring 4.5 mm x 2.5 mm x 1.5 mm, rated for a maximum collector-emitter voltage of -40 V, continuous collector current of -4 A, and peak collector current of -10 A. Collector-emitter saturation voltage is specified as low as 340 mV at -4 A and -200 mA base current. The device has a collector-emitter saturation resistance of 45 to 75 mΩ at -5 A and -500 mA base current, and a maximum total power dissipation of 2.5 W under pulsed conditions with Tamb ≤ 25 °C. Junction temperature rating is 150 °C. It is not automotive qualified.

Suppliers

Company
Product
Description
Supplier Links
40 V, 5 A PNP low VCEsat transistor - PBSS5540X,135 - Nexperia B.V.
Nijmegen, Netherlands
40 V, 5 A PNP low VCEsat transistor
PBSS5540X,135
40 V, 5 A PNP low VCEsat transistor PBSS5540X,135
PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device(SMD) plastic package. NPN complement: PBSS4540X Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Medium power driver (e.g. relays, buzzers and motors)

PNP low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device(SMD) plastic package.

NPN complement: PBSS4540X

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High efficiency leading to less heat generation

Applications

  • Supply line switching circuits
  • Battery management applications
  • DC/DC converter applications
  • Strobe flash units
  • Medium power driver (e.g. relays, buzzers and motors)
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS5540X,135 - 1086531-PBSS5540X,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS5540X,135
1086531-PBSS5540X,135
TRANSISTORS - Transistors (BJT) - Single - PBSS5540X,135 1086531-PBSS5540X,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086531-PBSS5540X,13 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 60MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 375mV @ 500mA, 5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 150 @ 2A, 2V Maximum Power Dissipation: 1.6W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086531-PBSS5540X,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 60MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 375mV @ 500mA, 5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 150 @ 2A, 2V
Maximum Power Dissipation: 1.6W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
40V 4A SOT89 Bipolar Transistor
276-PBSS5540X,135
40V 4A SOT89 Bipolar Transistor 276-PBSS5540X,135
TRANS PNP 40V 4A SOT89 Product overview: PBSS5540X,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 4A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 4A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5540X,135 can be used for catalog matching and distributor lookup.

TRANS PNP 40V 4A SOT89 Product overview: PBSS5540X,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 4A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 4A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5540X,135 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS5540X,135TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5540X,135TR-ND
Single Bipolar Transistors 1727-PBSS5540X,135TR-ND
Bipolar (BJT) Transistor PNP 40V 4A 60MHz 1.6W Surface Mount SOT-89

Bipolar (BJT) Transistor PNP 40V 4A 60MHz 1.6W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS5540X,135CT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5540X,135CT-ND
Single Bipolar Transistors 1727-PBSS5540X,135CT-ND
Bipolar (BJT) Transistor PNP 40V 4A 60MHz 1.6W Surface Mount SOT-89

Bipolar (BJT) Transistor PNP 40V 4A 60MHz 1.6W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS5540X,135DKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5540X,135DKR-ND
Single Bipolar Transistors 1727-PBSS5540X,135DKR-ND
Bipolar (BJT) Transistor PNP 40V 4A 60MHz 1.6W Surface Mount SOT-89

Bipolar (BJT) Transistor PNP 40V 4A 60MHz 1.6W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - PBSS5540X,135 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS5540X,135
Single Bipolar Transistors PBSS5540X,135
TRANS PNP 40V 4A SOT89

TRANS PNP 40V 4A SOT89

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Pnp, -40 V, 60 Mhz, 550 Mw, 5 A, 250 Rohs Compliant Nexperia - 93X4549 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Pnp, -40 V, 60 Mhz, 550 Mw, 5 A, 250 Rohs Compliant Nexperia
93X4549
Bipolar (Bjt) Single Transistor, Pnp, -40 V, 60 Mhz, 550 Mw, 5 A, 250 Rohs Compliant Nexperia 93X4549
Bipolar (BJT) Single Transistor, PNP, -40 V, 60 MHz, 550 mW, 5 A, 250 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, PNP, -40 V, 60 MHz, 550 mW, 5 A, 250 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5540X,135 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5540X,135
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5540X,135
TRANS PNP 40V 4A SOT89

TRANS PNP 40V 4A SOT89

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
PBSS5540X,135
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT PBSS5540X,135
40V 1.6W 150@2A,2V 4A PNP SOT-89-3 Bipolar Transistors - BJT ROHS

40V 1.6W 150@2A,2V 4A PNP SOT-89-3 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5540X,135 1086531-PBSS5540X,135 276-PBSS5540X,135 1727-PBSS5540X,135TR-ND PBSS5540X,135 93X4549 PBSS5540X,135 PBSS5540X,135
Product Name 40 V, 5 A PNP low VCEsat transistor TRANSISTORS - Transistors (BJT) - Single - PBSS5540X,135 40V 4A SOT89 Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors Bipolar (Bjt) Single Transistor, Pnp, -40 V, 60 Mhz, 550 Mw, 5 A, 250 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Package Type SOT89; SOT89 SOT89 SOT3; SOT89; SOT-89-3 Tape & Reel (TR) SOT89; TO-243AA SOT89; TO-243AA TO-3 AEC-Q100 SOT89
Polarity PNP; PNP PNP PNP PNP; PNP PNP PNP
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps 4000 milliamps
VCEO 40 volts 40 volts 40 volts 40 volts
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