PNP resistor-equipped transistor with built-in bias resistor R1 = 4.7 kΩ and R2 open, in a leadless ultra small plastic SOT883 (SC-101) package measuring 1.0 mm × 0.6 mm × 0.5 mm, designed for general purpose switching and amplification. Maximum collector-emitter voltage is -50 V, maximum output current is -100 mA, and total power dissipation is 250 mW. Operating junction temperature range is -65 °C to 150 °C. Thermal resistance from junction to ambient is 500 K/W. AEC-Q101 qualified.
PNP Resistor-Equipped Transistor (RET) in a very small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC143TM
Features and benefits
Applications
PDTA143T series - PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open DFN 3-Pin Product overview: PDTA143TM,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.7 kOhm, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 4.7 kOhm, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA143TM,315 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1035545-PDTA143TM,31
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 250μA, 5mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 200 @ 1mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount SOT-883
TRANS PREBIAS PNP 50V SOT883
TRANS PREBIAS PNP 50V SOT883
RF TRANSISTOR ROHS COMPLIANT: YES
TRANS PREBIAS PNP 250MW SOT883
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Transistors |
| Product Number | PDTA143TM,315 | 292-PDTA143TM,315 | 1035545-PDTA143TM,315 | 1727-PDTA143TM,315TR-ND | PDTA143TM,315 | 29AK3058 | 554-PDTA143TM,315 |
| Product Name | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | 4.7 kOhm DFN Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA143TM,315 | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor Rohs Compliant Nexperia | TRANS PREBIAS PNP 250MW SOT883 |
| Package Type | SOT883 SOT883 | SOT3; DFN1006-3 | SC-101, SOT-883 | SC-101, SOT-883 | TO-3 | ||
| Polarity | PNP; PNP - Pre-Biased | PNP | PNP; PNP | ||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT) |
