PNP resistor-equipped transistor with built-in bias resistors R1 = 47 kΩ and R2 = 10 kΩ in a leadless ultra small DFN1006B-3 (SOT883B) package measuring 1.0 × 0.6 × 0.37 mm, designed for low-current digital applications such as IC input control and mobile devices. It has a maximum collector current of 100 mA, a collector-emitter voltage rating of -50 V, and a total power dissipation of 250 mW at 25°C. The device is AEC-Q101 qualified and has a junction temperature range of -65°C to 150°C.
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144VMB.
Features and benefits
Applications
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3
TRANS PREBIAS PNP 50V 0.1A 3DFN
TRANS PREBIAS PNP 50V 0.1A 3DFN
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RF TRANSISTOR ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | PDTA144VMB,315 | 1727-PDTA144VMB,315TR-ND | PDTA144VMB,315 | 29AK3078 |
| Product Name | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ | Single, Pre-Biased Bipolar Transistors | Rf Transistor Rohs Compliant Nexperia | |
| Package Type | SOT883B SOT883B | 3-XFDFN | SOT883B | TO-3 |
