Nexperia B.V. 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ PDTB123YT,215

Description
PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors ±10 % resistor ratio tolerance Simplifies circuit design Reduces component count Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads
  • 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ - PDTB123YT,215 - Nexperia B.V.
    Nexperia B.V.
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    Win Source Electronics
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  • PDTB123YT,215 - Rochester Electronics
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  • Digital Transistor, 50V; Digital Transistor Polarity Nexperia - 74M3579 - Newark, An Avnet Company
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  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTB123YT,215 - Shenzhen Shengyu Electronics Technology Limited
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Request a Quote Datasheet
Description
PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors ±10 % resistor ratio tolerance Simplifies circuit design Reduces component count Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ - PDTB123YT,215 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
PDTB123YT,215
50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ PDTB123YT,215
PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors ±10 % resistor ratio tolerance Simplifies circuit design Reduces component count Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads

PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD123YT

Features and benefits

  • 500 mA output current capability
  • Reduces pick and place costs
  • Built-in bias resistors
  • ±10 % resistor ratio tolerance
  • Simplifies circuit design
  • Reduces component count

Applications

  • Digital application in automotive and industrial segments
  • Cost-saving alternative for BC807 series in digital applications
  • Control of IC inputs
  • Switching loads
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123YT,215 - 1087200-PDTB123YT,215 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123YT,215
1087200-PDTB123YT,215
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123YT,215 1087200-PDTB123YT,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1087200-PDTB123YT,21 5 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-236AB (SOT23) Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 50mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087200-PDTB123YT,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - PDTB123YT,215 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
PDTB123YT,215
Single, Pre-Biased Bipolar Transistors PDTB123YT,215
TRANS PREBIAS PNP 50V TO236AB

TRANS PREBIAS PNP 50V TO236AB

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-1703-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-1703-6-ND
Single, Pre-Biased Bipolar Transistors 1727-1703-6-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-1703-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-1703-1-ND
Single, Pre-Biased Bipolar Transistors 1727-1703-1-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-1703-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-1703-2-ND
Single, Pre-Biased Bipolar Transistors 1727-1703-2-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB

Buy Now Datasheet
- PDTB123YT,215 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PDTB123YT,215
PDTB123YT,215
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Supplier's Site Datasheet
Digital Transistor, 50V; Digital Transistor Polarity Nexperia - 74M3579 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Digital Transistor, 50V; Digital Transistor Polarity Nexperia
74M3579
Digital Transistor, 50V; Digital Transistor Polarity Nexperia 74M3579
DIGITAL TRANSISTOR, 50V; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:-500mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:10kohm; No. of Pins:3 Pin RoHS Compliant: Yes

DIGITAL TRANSISTOR, 50V; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:-500mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:10kohm; No. of Pins:3 Pin RoHS Compliant: Yes

Supplier's Site
Bipolar (Bjt) Single Transistor, Brt, Pnp, -50 V, 250 Mw, 50 Ma, 70 Rohs Compliant Nexperia - 93X4570 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Brt, Pnp, -50 V, 250 Mw, 50 Ma, 70 Rohs Compliant Nexperia
93X4570
Bipolar (Bjt) Single Transistor, Brt, Pnp, -50 V, 250 Mw, 50 Ma, 70 Rohs Compliant Nexperia 93X4570
Bipolar (BJT) Single Transistor, BRT, PNP, -50 V, 250 mW, 50 mA, 70 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, BRT, PNP, -50 V, 250 mW, 50 mA, 70 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTB123YT,215 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTB123YT,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTB123YT,215
TRANS PREBIAS PNP 50V TO236AB

TRANS PREBIAS PNP 50V TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics ODG (Origin Data Global) DigiKey Rochester Electronics Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PDTB123YT,215 1087200-PDTB123YT,215 PDTB123YT,215 1727-1703-6-ND PDTB123YT,215 74M3579 93X4570 PDTB123YT,215
Product Name 50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTB123YT,215 Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors Digital Transistor, 50V; Digital Transistor Polarity Nexperia Bipolar (Bjt) Single Transistor, Brt, Pnp, -50 V, 250 Mw, 50 Ma, 70 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased PNP - Pre-Biased; PNP PNP PNP PNP
Package Type SOT23; SOT23 SOT3; TO-236AB (SOT23) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 TO-3 TO-3
Transistor Grade / Operating Range Industrial; Automotive
IC(max) 500 milliamps 500 milliamps
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