Nexperia B.V. 60 V, 5 A PNP low VCEsat (BISS) transistor PBSS5560PA,115

Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 60 V, 5 A PNP low VCEsat (BISS) transistor - PBSS5560PA,115 - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-PBSS5560PA,115DKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-PBSS5560PA,115CT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-PBSS5560PA,115TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5560PA,115 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor,pnp,60V,5A,sot1061; Transistor Polarity Nexperia - 84R0235 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single Bipolar Transistors - PBSS5560PA,115 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 5 A PNP low VCEsat (BISS) transistor - PBSS5560PA,115 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 5 A PNP low VCEsat (BISS) transistor
PBSS5560PA,115
60 V, 5 A PNP low VCEsat (BISS) transistor PBSS5560PA,115
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4560PA.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Leadless small SMD plastic package with medium power capability

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS5560PA,115DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5560PA,115DKR-ND
Single Bipolar Transistors 1727-PBSS5560PA,115DKR-ND
Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS5560PA,115CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5560PA,115CT-ND
Single Bipolar Transistors 1727-PBSS5560PA,115CT-ND
Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS5560PA,115TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5560PA,115TR-ND
Single Bipolar Transistors 1727-PBSS5560PA,115TR-ND
Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60 V 5 A DFN Bipolar Transistor
276-PBSS5560PA,115
60 V 5 A DFN Bipolar Transistor 276-PBSS5560PA,115
PBSS5560PA - 60 V, 5 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5560PA,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 5 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 5 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5560PA,115 can be used for catalog matching and distributor lookup.

PBSS5560PA - 60 V, 5 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5560PA,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 5 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 5 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5560PA,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5560PA,115 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5560PA,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5560PA,115
TRANS PNP 60V 5A 3HUSON

TRANS PNP 60V 5A 3HUSON

Supplier's Site
Transistor,pnp,60V,5A,sot1061; Transistor Polarity Nexperia - 84R0235 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor,pnp,60V,5A,sot1061; Transistor Polarity Nexperia
84R0235
Transistor,pnp,60V,5A,sot1061; Transistor Polarity Nexperia 84R0235
TRANSISTOR,PNP,60V,5 A,SOT1061; Transistor Polarity:PNP; Collector Emitter Voltage Max:60V; Continuous Collector Current:5A; Power Dissipation:2.1W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:90MHz RoHS Compliant: Yes

TRANSISTOR,PNP,60V,5A,SOT1061; Transistor Polarity:PNP; Collector Emitter Voltage Max:60V; Continuous Collector Current:5A; Power Dissipation:2.1W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:90MHz RoHS Compliant: Yes

Supplier's Site
Single Bipolar Transistors - PBSS5560PA,115 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS5560PA,115
Single Bipolar Transistors PBSS5560PA,115
TRANS PNP 60V 5A 3HUSON

TRANS PNP 60V 5A 3HUSON

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number PBSS5560PA,115 1727-PBSS5560PA,115DKR-ND 276-PBSS5560PA,115 PBSS5560PA,115 84R0235 PBSS5560PA,115
Product Name 60 V, 5 A PNP low VCEsat (BISS) transistor Single Bipolar Transistors 60 V 5 A DFN Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor,pnp,60V,5A,sot1061; Transistor Polarity Nexperia Single Bipolar Transistors
Package Type SOT1061 SOT1061 3-PowerUDFN 3-HUSON (2x2) TO-3 3-PowerUDFN
Polarity PNP PNP PNP; PNP
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 5000 milliamps 5000 milliamps
VCEO 60 volts 60 volts
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