Nexperia B.V. 60 V, 1.7 A PNP low VCEsat transistor PBSS5260QAZ

Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 60 V, 1.7 A PNP low VCEsat transistor - PBSS5260QAZ - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-2386-1-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-2386-2-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-2386-6-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - PBSS5260QAZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • PBSS5260QAZ - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377069-PBSS5260QAZ - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5260QAZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia - 68Y7779 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 1.7 A PNP low VCEsat transistor - PBSS5260QAZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 1.7 A PNP low VCEsat transistor
PBSS5260QAZ
60 V, 1.7 A PNP low VCEsat transistor PBSS5260QAZ
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4260QA. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN complement: PBSS4260QA.

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Solderable side pads
  • AEC-Q101 qualified

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2386-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2386-1-ND
Single Bipolar Transistors 1727-2386-1-ND
Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Single Bipolar Transistors - 1727-2386-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2386-2-ND
Single Bipolar Transistors 1727-2386-2-ND
Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Single Bipolar Transistors - 1727-2386-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2386-6-ND
Single Bipolar Transistors 1727-2386-6-ND
Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor PNP 60V 1.7A 150MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Single Bipolar Transistors - PBSS5260QAZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS5260QAZ
Single Bipolar Transistors PBSS5260QAZ
TRANS PNP 60V 1.7A DFN1010D-3

TRANS PNP 60V 1.7A DFN1010D-3

Supplier's Site Datasheet
- PBSS5260QAZ - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PBSS5260QAZ
PBSS5260QAZ
PBSS5260QA - Small Signal Bipolar Transistor, DFN1010D-3

PBSS5260QA - Small Signal Bipolar Transistor, DFN1010D-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377069-PBSS5260QAZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1377069-PBSS5260QAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1377069-PBSS5260QAZ
Win Source Part Number: 1377069-PBSS5260QAZ Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Series: Automotive, AEC-Q100 Package: Tape & Reel Product Status: Active Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3 Base Product Number: PBSS5260 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 1.7 A Voltage - Collector Emitter Breakdown (Max): 60 V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 325 mW

Win Source Part Number: 1377069-PBSS5260QAZ
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q100
Package: Tape & Reel
Product Status: Active
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Base Product Number: PBSS5260
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 325 mW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5260QAZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5260QAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5260QAZ
TRANS PNP 60V 1.7A DFN1010D-3

TRANS PNP 60V 1.7A DFN1010D-3

Supplier's Site
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia - 68Y7779 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia
68Y7779
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia 68Y7779
Bipolar (BJT) Single Transistor, PNP, -60 V, 150 MHz, 325 mW, -1.7 A, 30 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, PNP, -60 V, 150 MHz, 325 mW, -1.7 A, 30 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5260QAZ 1727-2386-1-ND PBSS5260QAZ PBSS5260QAZ 1377069-PBSS5260QAZ PBSS5260QAZ 68Y7779
Product Name 60 V, 1.7 A PNP low VCEsat transistor Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar (Bjt) Single Transistor, Pnp, -60 V, 150 Mhz, 325 Mw, -1.7 A, 30 Rohs Compliant Nexperia
Polarity PNP PNP PNP; PNP PNP PNP
Package Type SOT1215 3-XDFN Exposed Pad 3-XDFN Exposed Pad SOT1215 SOT3 DFN1010D-3 TO-3
Transistor Grade / Operating Range Automotive
IC(max) 1700 milliamps 1700 milliamps
VCEO 60 volts 60 volts
Unlock Full Specs
to access all available technical data