Nexperia B.V. 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ PDTA113EM,315

Description
PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications General purpose switching and amplification Inverter and interface circuits Circuit driver
Request a Quote Datasheet
Description
PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications General purpose switching and amplification Inverter and interface circuits Circuit driver
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ - PDTA113EM,315 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
PDTA113EM,315
50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ PDTA113EM,315
PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113EM Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications General purpose switching and amplification Inverter and interface circuits Circuit driver

PNP Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTC113EM

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification
  • Inverter and interface circuits
  • Circuit driver
Supplier's Site Datasheet
 - PDTA113EM,315 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Singapore
1 kOhm DFN Bipolar Transistor
292-PDTA113EM,315
1 kOhm DFN Bipolar Transistor 292-PDTA113EM,315
PDTA113E series - PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm DFN 3-Pin Product overview: PDTA113EM,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1 kOhm, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 1 kOhm, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA113EM,315 can be used for catalog matching and distributor lookup.

PDTA113E series - PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 1 kOhm DFN 3-Pin Product overview: PDTA113EM,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1 kOhm, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 1 kOhm, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA113EM,315 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - PDTA113EM,315-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
PDTA113EM,315-ND
Single, Pre-Biased Bipolar Transistors PDTA113EM,315-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount SOT-883

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount SOT-883

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - PDTA113EM,315 - 966283-PDTA113EM,315 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - PDTA113EM,315
966283-PDTA113EM,315
TRANSISTORS - RF Transistors (BJT) - PDTA113EM,315 966283-PDTA113EM,315
Manufacturer: Nexperia USA Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 966283-PDTA113EM,315 Packaging: Tape & Reel (TR) Mounting: SMD (SMT) Polarity: PNP Number of Pins: 3 Categories: RF Transistors(BJT) Case / Package: DFN Popularity: Low Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Power Dissipation: 250 mW Max Breakdown Voltage: 50 V Collector Emitter Breakdown Voltage: 50 V Collector Emitter Voltage (VCEO): 50 V Max Collector Current: 100 mA

Manufacturer: Nexperia USA Inc.
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 966283-PDTA113EM,315
Packaging: Tape & Reel (TR)
Mounting: SMD (SMT)
Polarity: PNP
Number of Pins: 3
Categories: RF Transistors(BJT)
Case / Package: DFN
Popularity: Low
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -65 °C
Element Configuration: Single
Max Power Dissipation: 250 mW
Max Breakdown Voltage: 50 V
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Voltage (VCEO): 50 V
Max Collector Current: 100 mA

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTA113EM,315 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTA113EM,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTA113EM,315
TRANS PREBIAS PNP 50V SOT883

TRANS PREBIAS PNP 50V SOT883

Supplier's Site
Rf Transistor Rohs Compliant Nexperia - 29AK3012 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK3012
Rf Transistor Rohs Compliant Nexperia 29AK3012
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors RF Transistors
Product Number PDTA113EM,315 PDTA113EM,315 292-PDTA113EM,315 PDTA113EM,315-ND 966283-PDTA113EM,315 PDTA113EM,315 29AK3012
Product Name 50 V, 100 mA PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ 1 kOhm DFN Bipolar Transistor Single, Pre-Biased Bipolar Transistors TRANSISTORS - RF Transistors (BJT) - PDTA113EM,315 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor Rohs Compliant Nexperia
Polarity PNP PNP PNP PNP; PNP
Package Type SOT883 SOT883 SC-101, SOT-883 SOT3; DFN SC-101, SOT-883 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
Transistor Grade / Operating Range Automotive
TJ -65 C (-85 F)
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