PNP resistor-equipped transistor with built-in bias resistors R1 = 2.2 kΩ and R2 = 2.2 kΩ, in a leadless DFN1006B-3 (SOT883B) package measuring 1.0 × 0.6 × 0.37 mm, designed for low-current digital applications and automotive use. It supports a maximum collector current of 100 mA, collector-emitter voltage of -50 V, and total power dissipation of 250 mW at 25°C, with junction temperature up to 150°C. The device is AEC-Q101 qualified and features a low profile for space-constrained designs.
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB.
Features and benefits
Applications
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon
TRANS PREBIAS PNP 50V 0.1A 3DFN
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3
TRANS PREBIAS PNP 50V 0.1A 3DFN
RF TRANSISTOR ROHS COMPLIANT: YES
| Nexperia B.V. | Rochester Electronics | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | RF Transistors |
| Product Number | PDTA123EMB,315 | PDTA123EMB,315 | 1727-PDTA123EMB,315CT-ND | 29AK3035 |
| Product Name | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | Single, Pre-Biased Bipolar Transistors | Rf Transistor Rohs Compliant Nexperia | |
| Package Type | SOT883B SOT883B | SOT883B | 3-XFDFN | TO-3 |
