Nexperia B.V. 100 V, 1 A NPN low VCEsat transistor PBSS8110Z,135

Description
NPN low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Qualified AEC-Q101 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
Request a Quote Datasheet
Description
NPN low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Qualified AEC-Q101 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100 V, 1 A NPN low VCEsat transistor - PBSS8110Z,135 - Nexperia B.V.
Nijmegen, Netherlands
100 V, 1 A NPN low VCEsat transistor
PBSS8110Z,135
100 V, 1 A NPN low VCEsat transistor PBSS8110Z,135
NPN low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Qualified AEC-Q101 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications

NPN low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS9110Z

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Qualified AEC-Q101

Applications

  • High-voltage DC-to-DC conversion
  • High-voltage MOSFET gate driving
  • High-voltage motor control
  • High-voltage power switches (e.g. motors, fans)
  • Automotive applications
Supplier's Site Datasheet
Singapore
100 V 1 A Bipolar Transistor
276-PBSS8110Z,135
100 V 1 A Bipolar Transistor 276-PBSS8110Z,135
PBSS8110Z - 100 V, 1 A NPN low VCesat (BISS) transistor SC-73 4-Pin Product overview: PBSS8110Z,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 100 V, 1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS8110Z,135 can be used for catalog matching and distributor lookup.

PBSS8110Z - 100 V, 1 A NPN low VCesat (BISS) transistor SC-73 4-Pin Product overview: PBSS8110Z,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 100 V, 1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS8110Z,135 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS8110Z,135 - 1086542-PBSS8110Z,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS8110Z,135
1086542-PBSS8110Z,135
TRANSISTORS - Transistors (BJT) - Single - PBSS8110Z,135 1086542-PBSS8110Z,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086542-PBSS8110Z,13 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 200mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 150 @ 250mA, 10V Maximum Power Dissipation: 1.4W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086542-PBSS8110Z,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 200mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 150 @ 250mA, 10V
Maximum Power Dissipation: 1.4W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistors - 5182107P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
5182107P
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Supplier's Site
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Bipolar Transistors
5182107
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Bipolar Transistors
1660618
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NPN Transistor 1A SOT223,PBSS8110Z

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Supplier's Site
Single Bipolar Transistors - 1727-5367-6-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5367-6-ND
Single Bipolar Transistors 1727-5367-6-ND
Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-223

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Single Bipolar Transistors - 1727-5367-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5367-2-ND
Single Bipolar Transistors 1727-5367-2-ND
Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-223

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Single Bipolar Transistors - 1727-5367-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-5367-1-ND
Single Bipolar Transistors 1727-5367-1-ND
Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-223

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 100 V, 650 Mw, 1 A, 150 Rohs Compliant Nexperia - 38K6434 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 100 V, 650 Mw, 1 A, 150 Rohs Compliant Nexperia
38K6434
Bipolar (Bjt) Single Transistor, Npn, 100 V, 650 Mw, 1 A, 150 Rohs Compliant Nexperia 38K6434
Bipolar (BJT) Single Transistor, NPN, 100 V, 650 mW, 1 A, 150 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 100 V, 650 mW, 1 A, 150 RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Npn, 100 V, 100 Mhz, 650 Mw, 1 A, 150 Rohs Compliant Nexperia - 93X4553 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 100 V, 100 Mhz, 650 Mw, 1 A, 150 Rohs Compliant Nexperia
93X4553
Bipolar (Bjt) Single Transistor, Npn, 100 V, 100 Mhz, 650 Mw, 1 A, 150 Rohs Compliant Nexperia 93X4553
Bipolar (BJT) Single Transistor, NPN, 100 V, 100 MHz, 650 mW, 1 A, 150 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 100 V, 100 MHz, 650 mW, 1 A, 150 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS8110Z,135 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS8110Z,135
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS8110Z,135
TRANS NPN 100V 1A SOT223

TRANS NPN 100V 1A SOT223

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS8110Z,135 276-PBSS8110Z,135 1086542-PBSS8110Z,135 5182107P 5182107 1727-5367-6-ND 38K6434 PBSS8110Z,135
Product Name 100 V, 1 A NPN low VCEsat transistor 100 V 1 A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - PBSS8110Z,135 Bipolar Transistors Bipolar Transistors Single Bipolar Transistors Bipolar (Bjt) Single Transistor, Npn, 100 V, 650 Mw, 1 A, 150 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN NPN NPN NPN
Package Type SOT223; SOT223 SOT3; SOT-223 SOT223; SOT-223 SOT223; Sot-223 (sc-73) SOT223; TO-261-4, TO-261AA TO-3 AEC-Q100
Transistor Grade / Operating Range Automotive Automotive
Number of units in IC 1
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