Nexperia B.V. PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTA123EM,315

PNP Resistor-Equipped Transistor (RET) in a ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTC123EM

Features and benefits

• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs
• AEC-Q101 qualified

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver

PDTA123E series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm DFN 3-Pin Product overview: PDTA123EM,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.2 kOhm, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 2.2 kOhm, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA123EM,315 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount SOT-883