Nexperia B.V. 50 V, 3 A PNP low VCEsat transistor PBSS5350D,135

Description
PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D Features and benefits Low collector-emitter saturation voltage VCEsat High current capability High efficiency due to less heat generation Smaller Printed-Circuit Board (PCB) area than for conventional transistors Applications Supply line switching circuits Battery management applications DC-to-DC conversion
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Description
PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D Features and benefits Low collector-emitter saturation voltage VCEsat High current capability High efficiency due to less heat generation Smaller Printed-Circuit Board (PCB) area than for conventional transistors Applications Supply line switching circuits Battery management applications DC-to-DC conversion
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package with a 6-lead configuration. It has a collector-emitter voltage rating of -50 V, a continuous collector current of -3 A, and a peak collector current of -5 A. The collector-emitter saturation voltage is specified up to -300 mV at -2 A collector current and -200 mA base current. The device has a maximum total power dissipation of 1200 mW when mounted on a 4-layer PCB and a junction temperature rating of 150 °C. The thermal resistance from junction to ambient is 100 K/W under pulsed conditions with a 6 cm² collector pad. The part has an SOT457 package with dimensions of 3.1 mm × 2.7 mm × 1.1 mm, and its base-emitter saturation voltage is rated at -1.2 V. It meets IEC 60134 for limiting values and is not automotive qualified.

Datasheet Summary
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PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package with a 6-lead configuration. It has a collector-emitter voltage rating of -50 V, a continuous collector current of -3 A, and a peak collector current of -5 A. The collector-emitter saturation voltage is specified up to -300 mV at -2 A collector current and -200 mA base current. The device has a maximum total power dissipation of 1200 mW when mounted on a 4-layer PCB and a junction temperature rating of 150 °C. The thermal resistance from junction to ambient is 100 K/W under pulsed conditions with a 6 cm² collector pad. The part has an SOT457 package with dimensions of 3.1 mm × 2.7 mm × 1.1 mm, and its base-emitter saturation voltage is rated at -1.2 V. It meets IEC 60134 for limiting values and is not automotive qualified.

Suppliers

Company
Product
Description
Supplier Links
50 V, 3 A PNP low VCEsat transistor - PBSS5350D,135 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 3 A PNP low VCEsat transistor
PBSS5350D,135
50 V, 3 A PNP low VCEsat transistor PBSS5350D,135
PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D Features and benefits Low collector-emitter saturation voltage VCEsat High current capability High efficiency due to less heat generation Smaller Printed-Circuit Board (PCB) area than for conventional transistors Applications Supply line switching circuits Battery management applications DC-to-DC conversion

PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350D

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High current capability
  • High efficiency due to less heat generation
  • Smaller Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • Supply line switching circuits
  • Battery management applications
  • DC-to-DC conversion
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS5350D,135TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS5350D,135TR-ND
Single Bipolar Transistors 1727-PBSS5350D,135TR-ND
Bipolar (BJT) Transistor PNP 50V 3A 100MHz 750mW Surface Mount 6-TSOP

Bipolar (BJT) Transistor PNP 50V 3A 100MHz 750mW Surface Mount 6-TSOP

Buy Now Datasheet
 - PBSS5350D,135 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin

Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin

Supplier's Site Datasheet
Singapore, Singapore
50 V 3 A Bipolar Transistor
276-PBSS5350D,135
50 V 3 A Bipolar Transistor 276-PBSS5350D,135
PBSS5350D - 50 V, 3 A PNP low VCEsat (BISS) transistor TSOP 6-Pin Product overview: PBSS5350D,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 3 A. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5350D,135 can be used for catalog matching and distributor lookup.

PBSS5350D - 50 V, 3 A PNP low VCEsat (BISS) transistor TSOP 6-Pin Product overview: PBSS5350D,135 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 3 A. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5350D,135 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS5350D,135 - 1086524-PBSS5350D,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS5350D,135
1086524-PBSS5350D,135
TRANSISTORS - Transistors (BJT) - Single - PBSS5350D,135 1086524-PBSS5350D,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086524-PBSS5350D,13 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 200mA, 2A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 2A, 2V Maximum Power Dissipation: 750mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086524-PBSS5350D,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSOP
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 2A, 2V
Maximum Power Dissipation: 750mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5350D,135 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5350D,135
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5350D,135
TRANS PNP 50V 3A 6TSOP

TRANS PNP 50V 3A 6TSOP

Supplier's Site
Transistor, Bipolar Rohs Compliant Nexperia - 29AK2933 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
29AK2933
Transistor, Bipolar Rohs Compliant Nexperia 29AK2933
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Power MOSFET Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5350D,135 1727-PBSS5350D,135TR-ND PBSS5350D,135 276-PBSS5350D,135 1086524-PBSS5350D,135 PBSS5350D,135 29AK2933
Product Name 50 V, 3 A PNP low VCEsat transistor Single Bipolar Transistors 50 V 3 A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - PBSS5350D,135 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Bipolar Rohs Compliant Nexperia
Package Type SOT457 SOT457 SC-74, SOT-457 SOT457 SOT3; 6-TSOP TO-3
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