Nexperia B.V. PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open PDTA114TMB,315

Description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote Datasheet
Description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open - PDTA114TMB,315 - Nexperia B.V.
Nijmegen, Netherlands
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open
PDTA114TMB,315
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open PDTA114TMB,315
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB.

Features and benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • Leadless ultra small SMD plastic package
  • Low package height of 0.37 mm
  • AEC-Q101 qualified

Applications

  • Low-current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
  • Mobile applications
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TMB,315 - 755573-PDTA114TMB,315 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TMB,315
755573-PDTA114TMB,315
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TMB,315 755573-PDTA114TMB,315
Manufacturer: Nexperia USA Inc. Win Source Part Number: 755573-PDTA114TMB,31 5 Packaging: Tape and Reel Mounting Style: SMD Transistor Type: PNP - Pre-Biased Frequency - Transition: 180MHz Categories: Discrete Semiconductor Products Supplier Device Package: DFN1006B-3 Manufacturer Package: 3-XFDFN Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient Family Part Number: PDTA114 Manufacturer Pack Quantity: 10,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 150mV at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 1mA, 5V Maximum Power: 250mW Resistor - Base (R1): 10 kOhms

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 755573-PDTA114TMB,315
Packaging: Tape and Reel
Mounting Style: SMD
Transistor Type: PNP - Pre-Biased
Frequency - Transition: 180MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: DFN1006B-3
Manufacturer Package: 3-XFDFN
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
Family Part Number: PDTA114
Manufacturer Pack Quantity: 10,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 150mV at 500μA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 1mA, 5V
Maximum Power: 250mW
Resistor - Base (R1): 10 kOhms

Buy Now
Singapore, Singapore
Automotive 50V 100mA DFN Bipolar Transistor
292-PDTA114TMB,315
Automotive 50V 100mA DFN Bipolar Transistor 292-PDTA114TMB,315
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin DFN-B T/R Product overview: PDTA114TMB,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 100mA, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 100mA, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA114TMB,315 can be used for catalog matching and distributor lookup.

Trans Digital BJT PNP 50V 100mA Automotive 3-Pin DFN-B T/R Product overview: PDTA114TMB,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 100mA, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 100mA, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA114TMB,315 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTA114TMB,315DKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTA114TMB,315DKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTA114TMB,315DKR-ND
TRANS PREBIAS PNP 50V 0.1A 3DFN

TRANS PREBIAS PNP 50V 0.1A 3DFN

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTA114TMB,315CT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTA114TMB,315CT-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTA114TMB,315CT-ND
TRANS PREBIAS PNP 50V 0.1A 3DFN

TRANS PREBIAS PNP 50V 0.1A 3DFN

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTA114TMB,315TR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTA114TMB,315TR-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTA114TMB,315TR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 250mW Surface Mount DFN1006B-3

Buy Now Datasheet
 - PDTA114TMB,315 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Rf Transistor Rohs Compliant Nexperia - 29AK3022 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK3022
Rf Transistor Rohs Compliant Nexperia 29AK3022
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors RF Transistors
Product Number PDTA114TMB,315 755573-PDTA114TMB,315 292-PDTA114TMB,315 1727-PDTA114TMB,315DKR-ND PDTA114TMB,315 29AK3022
Product Name PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTA114TMB,315 Automotive 50V 100mA DFN Bipolar Transistor Single, Pre-Biased Bipolar Transistors Rf Transistor Rohs Compliant Nexperia
Package Type SOT883B SOT883B SOT3 3-XFDFN SOT883B TO-3
Polarity PNP PNP PNP
PD 250 milliwatts
TJ -65 C (-85 F)
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