Nexperia B.V. 55V, 2A PNP/PNP low VCEsat (BISS) double transistor PBSS5255PAPSX

Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
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Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote
Datasheet
Datasheet Summary
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PNP/PNP low VCEsat (BISS) double transistor in a leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm, featuring an exposed heat sink for enhanced thermal and electrical conductivity. Each transistor supports a maximum collector current of -2 A and a peak collector current of -3 A, with a collector-emitter saturation voltage as low as 300 mV at -0.7 A and -7 mA. The device operates with a collector-emitter voltage of up to -55 V, and junction temperature up to 150 °C. Suitable for load switching, battery-powered devices, power management, and LED lighting applications. Complies with IEC 60134 for limiting values and is suitable for Automatic Optical Inspection (AOI) of solder joints.

Datasheet Summary
Powered by GS/AI

PNP/PNP low VCEsat (BISS) double transistor in a leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm, featuring an exposed heat sink for enhanced thermal and electrical conductivity. Each transistor supports a maximum collector current of -2 A and a peak collector current of -3 A, with a collector-emitter saturation voltage as low as 300 mV at -0.7 A and -7 mA. The device operates with a collector-emitter voltage of up to -55 V, and junction temperature up to 150 °C. Suitable for load switching, battery-powered devices, power management, and LED lighting applications. Complies with IEC 60134 for limiting values and is suitable for Automatic Optical Inspection (AOI) of solder joints.

Suppliers

Company
Product
Description
Supplier Links
55V, 2A PNP/PNP low VCEsat (BISS) double transistor - PBSS5255PAPSX - Nexperia B.V.
Nijmegen, Netherlands
55V, 2A PNP/PNP low VCEsat (BISS) double transistor
PBSS5255PAPSX
55V, 2A PNP/PNP low VCEsat (BISS) double transistor PBSS5255PAPSX
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High energy efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-PBSS5255PAPSXTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5255PAPSXTR-ND
Bipolar Transistor Arrays 1727-PBSS5255PAPSXTR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 55V 2A 100MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 55V 2A 100MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-PBSS5255PAPSXCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5255PAPSXCT-ND
Bipolar Transistor Arrays 1727-PBSS5255PAPSXCT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 55V 2A 100MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 55V 2A 100MHz 370mW Surface Mount DFN2020D-6

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Bipolar Transistor Arrays - 1727-PBSS5255PAPSXDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-PBSS5255PAPSXDKR-ND
Bipolar Transistor Arrays 1727-PBSS5255PAPSXDKR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 55V 2A 100MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 55V 2A 100MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS5255PAPSX
Bipolar Transistors - BJT PBSS5255PAPSX
Bipolar Transistors - BJT PBSS5255PAPS/HUSON6/ REEL 7" Q1

Bipolar Transistors - BJT PBSS5255PAPS/HUSON6/REEL 7" Q1

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5255PAPSX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5255PAPSX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5255PAPSX
TRANS 2PNP 55V 2A DFN2020D-6

TRANS 2PNP 55V 2A DFN2020D-6

Supplier's Site
Trans, Dual Pnp, Aec-Q101, -55V, Sot1118D; Transistor Polarity Nexperia - 82Y7119 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Pnp, Aec-Q101, -55V, Sot1118D; Transistor Polarity Nexperia
82Y7119
Trans, Dual Pnp, Aec-Q101, -55V, Sot1118D; Transistor Polarity Nexperia 82Y7119
TRANS, DUAL PNP, AEC-Q101, -55V, SOT1118D; Transistor Polarity:Dual PNP; Power Dissipation Pd:370mW; Transistor Case Style:SOT-1118; No. of Pins:6Pins; Operating Temperature Max:150 C; Product Range:-; Automotive Qualification RoHS Compliant: Yes

TRANS, DUAL PNP, AEC-Q101, -55V, SOT1118D; Transistor Polarity:Dual PNP; Power Dissipation Pd:370mW; Transistor Case Style:SOT-1118; No. of Pins:6Pins; Operating Temperature Max:150 C; Product Range:-; Automotive Qualification RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number PBSS5255PAPSX 1727-PBSS5255PAPSXTR-ND PBSS5255PAPSX PBSS5255PAPSX 82Y7119
Product Name 55V, 2A PNP/PNP low VCEsat (BISS) double transistor Bipolar Transistor Arrays Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Dual Pnp, Aec-Q101, -55V, Sot1118D; Transistor Polarity Nexperia
Package Type SOT1118D SOT1118D 6-UDFN Exposed Pad DFN2020D-6 TO-3
Polarity PNP PNP
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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