NPN resistor-equipped transistor with built-in bias resistor R1 = 22 kΩ and no R2, in a leadless DFN1006B-3 (SOT883B) SMD package measuring 1.0 × 0.6 × 0.37 mm. It has a maximum collector current of 100 mA, a collector-emitter voltage rating of 50 V, and a power dissipation of 250 mW at 25°C ambient. The device is AEC-Q101 qualified and features a typical DC current gain of 100, collector-emitter saturation voltage of 150 mV at 10 mA collector current, and a transition frequency of 230 MHz. Thermal resistance from junction to ambient is 500 K/W when mounted on a standard FR4 PCB.
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124TMB.
Features and benefits
Applications
PDTC124TMB - Small Signal Bipolar Transistor, 0.1A, 50V, NPN, XQFN3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount DFN1006B-3
TRANS PREBIAS NPN 50V 0.1A 3DFN
RF TRANSISTOR ROHS COMPLIANT: YES
| Nexperia B.V. | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | PDTC124TMB,315 | PDTC124TMB,315 | PDTC124TMB,315-ND | PDTC124TMB,315 | 29AK3142 |
| Product Name | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor Rohs Compliant Nexperia | |
| Package Type | SOT883B SOT883B | SOT883B | 3-XFDFN | 3-XFDFN | TO-3 |
| Polarity | NPN | NPN | |||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) | |||
| Transistor Grade / Operating Range | Automotive |
