Nexperia B.V. 50 V, 3 A PNP low VCEsat transistor PBSS5350T,215

Description
PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation Applications Power management applications Low and medium power DC/DC converters Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO)
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Description
PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation Applications Power management applications Low and medium power DC/DC converters Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO)
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Datasheet
Datasheet Summary
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PNP low VCEsat transistor in a small SOT23 (TO-236AB) surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm. It has a collector-emitter voltage rating of -50 V, a continuous collector current of -2 A, and a repetitive peak collector current of -3 A. The collector-emitter saturation voltage is rated at -320 mV at -2 A collector current and -100 mA base current. The saturation resistance is 90 mΩ at the same conditions. Maximum total power dissipation is 300 mW on a standard FR4 PCB. The device complies with IEC 60134 and operates from -65 °C to 150 °C. NPN complement: PBSS4350T.

Datasheet Summary
Powered by GS/AI

PNP low VCEsat transistor in a small SOT23 (TO-236AB) surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm. It has a collector-emitter voltage rating of -50 V, a continuous collector current of -2 A, and a repetitive peak collector current of -3 A. The collector-emitter saturation voltage is rated at -320 mV at -2 A collector current and -100 mA base current. The saturation resistance is 90 mΩ at the same conditions. Maximum total power dissipation is 300 mW on a standard FR4 PCB. The device complies with IEC 60134 and operates from -65 °C to 150 °C. NPN complement: PBSS4350T.

Suppliers

Company
Product
Description
Supplier Links
50 V, 3 A PNP low VCEsat transistor - PBSS5350T,215 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 3 A PNP low VCEsat transistor
PBSS5350T,215
50 V, 3 A PNP low VCEsat transistor PBSS5350T,215
PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350T Features and benefits Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation Applications Power management applications Low and medium power DC/DC converters Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO)

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350T

Features and benefits

  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
  • High collector current capability
  • High collector current gain
  • Improved efficiency due to reduced heat generation

Applications

  • Power management applications
  • Low and medium power DC/DC converters
  • Supply line switching
  • Battery chargers
  • Linear voltage regulation with low voltage drop-out (LDO)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-3912-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-3912-2-ND
Single Bipolar Transistors 1727-3912-2-ND
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 540mW Surface Mount TO-236AB

Bipolar (BJT) Transistor PNP 50V 2A 100MHz 540mW Surface Mount TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-3912-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-3912-1-ND
Single Bipolar Transistors 1727-3912-1-ND
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 540mW Surface Mount TO-236AB

Bipolar (BJT) Transistor PNP 50V 2A 100MHz 540mW Surface Mount TO-236AB

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Single Bipolar Transistors - 1727-3912-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-3912-6-ND
Single Bipolar Transistors 1727-3912-6-ND
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 540mW Surface Mount TO-236AB

Bipolar (BJT) Transistor PNP 50V 2A 100MHz 540mW Surface Mount TO-236AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
50 V 3 A Bipolar Transistor
276-PBSS5350T,215
50 V 3 A Bipolar Transistor 276-PBSS5350T,215
PBSS5350T - 50 V, 3 A PNP low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS5350T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 3 A. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5350T,215 can be used for catalog matching and distributor lookup.

PBSS5350T - 50 V, 3 A PNP low VCEsat (BISS) transistor TO-236 3-Pin Product overview: PBSS5350T,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50 V, 3 A. Search-friendly keywords include transistor, BJT, switching, amplification, 50 V, 3 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5350T,215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Pnp, -50 V, 100 Mhz, 300 Mw, 3 A, 200 Rohs Compliant Nexperia - 93X4545 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Pnp, -50 V, 100 Mhz, 300 Mw, 3 A, 200 Rohs Compliant Nexperia
93X4545
Bipolar (Bjt) Single Transistor, Pnp, -50 V, 100 Mhz, 300 Mw, 3 A, 200 Rohs Compliant Nexperia 93X4545
Bipolar (BJT) Single Transistor, PNP, -50 V, 100 MHz, 300 mW, 3 A, 200 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, PNP, -50 V, 100 MHz, 300 mW, 3 A, 200 RoHS Compliant: Yes

Supplier's Site
Bipolar (Bjt) Single Transistor, Pnp, 50 V, 300 Mw, 3 A, 200 Rohs Compliant Nexperia - 38K6424 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Pnp, 50 V, 300 Mw, 3 A, 200 Rohs Compliant Nexperia
38K6424
Bipolar (Bjt) Single Transistor, Pnp, 50 V, 300 Mw, 3 A, 200 Rohs Compliant Nexperia 38K6424
Bipolar (BJT) Single Transistor, PNP, 50 V, 300 mW, 3 A, 200 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, PNP, 50 V, 300 mW, 3 A, 200 RoHS Compliant: Yes

Supplier's Site
Single Bipolar Transistors - PBSS5350T,215 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBSS5350T,215
Single Bipolar Transistors PBSS5350T,215
NOW NEXPERIA PBSS5350T - SMALL S

NOW NEXPERIA PBSS5350T - SMALL S

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
PBSS5350T,215
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT PBSS5350T,215
50V 540mW 200@1A,2V 2A PNP SOT-23 Bipolar Transistors - BJT ROHS

50V 540mW 200@1A,2V 2A PNP SOT-23 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5350T,215 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5350T,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5350T,215
TRANS PNP 50V 2A TO236AB

TRANS PNP 50V 2A TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5350T,215 1727-3912-2-ND 276-PBSS5350T,215 93X4545 PBSS5350T,215 PBSS5350T,215 PBSS5350T,215
Product Name 50 V, 3 A PNP low VCEsat transistor Single Bipolar Transistors 50 V 3 A Bipolar Transistor Bipolar (Bjt) Single Transistor, Pnp, -50 V, 100 Mhz, 300 Mw, 3 A, 200 Rohs Compliant Nexperia Single Bipolar Transistors Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23
Polarity PNP PNP PNP; PNP PNP
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps
VCEO 50 volts 50 volts 50 volts
Operating Frequency 100 MHz
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