NPN Resistor-Equipped Transistor (RET) with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ, housed in an SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm. The device offers a maximum collector-emitter voltage of 50 V and a collector current of 100 mA. It is designed for digital applications and simplifies circuit design by reducing component count. The total power dissipation is 250 mW at ambient temperatures up to 25 °C, with a maximum junction temperature of 150 °C. Thermal resistance from junction to ambient is 500 K/W under standard FR4 PCB mounting conditions.
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA114ET
Features and benefits
Applications
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 801566-PDTC114ET,215
Packaging: Reel
Mounting Style: SMD
Power - Max: 250mW
Transistor Type: NPN - Pre-Biased
Frequency - Transition: 230MHz
Supplier Device Package: TO-236AB
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 150mV at 500μA, 10mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Part Number Series: PDTC114
DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 5mA, 5V
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; No. of Pins:3 Pin RoHS Compliant: Yes
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V RoHS Compliant: Yes
30@5mA,5V 1 NPN - Pre Biased 250mW 100mA 50V 1uA SOT-23 Digital Transistors ROHS
TRANS PREBIAS NPN 50V TO236AB
TRANS PREBIAS NPN 250MW TO236AB
| Nexperia B.V. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PDTC114ET,215 | 1727-5131-2-ND | 801566-PDTC114ET,215 | 01M8463 | 97W2495 | PDTC114ET,215 | PDTC114ET,215 | PDTC114ET,215 |
| Product Name | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | Single, Pre-Biased Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC114ET,215 | Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Nexperia | Bipolar Pre-Biased / Digital Transistor, Brt, 50 V Rohs Compliant Nexperia | Triode/MOS Tube/Transistor >> Digital Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single, Pre-Biased Bipolar Transistors |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23 | TO-3 | TO-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Transistor Grade / Operating Range | Industrial; Automotive | |||||||
| Polarity | NPN | NPN | NPN | NPN - Pre-Biased; NPN | ||||
| Transistor Type | Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Nexperia | |||||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
