Nexperia B.V. 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ PDTC114ET,215

Description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Digital application in automotive and industrial segments Cost-saving alternative for BC847 series in digital applications Controlling IC inputs Switching loads
  • 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ - PDTC114ET,215 - Nexperia B.V.
    Nexperia B.V.
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  • Single, Pre-Biased Bipolar Transistors - PDTC114ET,215 - ODG (Origin Data Global)
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  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTC114ET,215 - Shenzhen Shengyu Electronics Technology Limited
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Request a Quote Datasheet
Description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Digital application in automotive and industrial segments Cost-saving alternative for BC847 series in digital applications Controlling IC inputs Switching loads
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ - PDTC114ET,215 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
PDTC114ET,215
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ PDTC114ET,215
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114ET Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Digital application in automotive and industrial segments Cost-saving alternative for BC847 series in digital applications Controlling IC inputs Switching loads

NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA114ET

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Digital application in automotive and industrial segments
  • Cost-saving alternative for BC847 series in digital applications
  • Controlling IC inputs
  • Switching loads
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC114ET,215 - 801566-PDTC114ET,215 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC114ET,215
801566-PDTC114ET,215
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC114ET,215 801566-PDTC114ET,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 801566-PDTC114ET,215 Packaging: Reel Mounting Style: SMD Power - Max: 250mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 230MHz Supplier Device Package: TO-236AB Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 150mV at 500μA, 10mA Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Part Number Series: PDTC114 DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 5mA, 5V

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 801566-PDTC114ET,215
Packaging: Reel
Mounting Style: SMD
Power - Max: 250mW
Transistor Type: NPN - Pre-Biased
Frequency - Transition: 230MHz
Supplier Device Package: TO-236AB
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 150mV at 500μA, 10mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Part Number Series: PDTC114
DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 5mA, 5V

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Thief River Falls, MN, United States
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Single, Pre-Biased Bipolar Transistors 1727-5131-2-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB

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Single, Pre-Biased Bipolar Transistors - 1727-5131-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-5131-6-ND
Single, Pre-Biased Bipolar Transistors 1727-5131-6-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-5131-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-5131-1-ND
Single, Pre-Biased Bipolar Transistors 1727-5131-1-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - PDTC114ET,215 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
PDTC114ET,215
Single, Pre-Biased Bipolar Transistors PDTC114ET,215
TRANS PREBIAS NPN 250MW TO236AB

TRANS PREBIAS NPN 250MW TO236AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTC114ET,215 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTC114ET,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTC114ET,215
TRANS PREBIAS NPN 50V TO236AB

TRANS PREBIAS NPN 50V TO236AB

Supplier's Site
Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Nexperia - 01M8463 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Nexperia
01M8463
Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Nexperia 01M8463
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; No. of Pins:3 Pin RoHS Compliant: Yes

DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; No. of Pins:3 Pin RoHS Compliant: Yes

Supplier's Site
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V Rohs Compliant Nexperia - 97W2495 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V Rohs Compliant Nexperia
97W2495
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V Rohs Compliant Nexperia 97W2495
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V RoHS Compliant: Yes

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V RoHS Compliant: Yes

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Digital Transistors
PDTC114ET,215
Triode/MOS Tube/Transistor >> Digital Transistors PDTC114ET,215
30@5mA,5V 1 NPN - Pre Biased 250mW 100mA 50V 1uA SOT-23 Digital Transistors ROHS

30@5mA,5V 1 NPN - Pre Biased 250mW 100mA 50V 1uA SOT-23 Digital Transistors ROHS

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company LCSC Electronics Technology (HK) Limited
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors
Product Number PDTC114ET,215 801566-PDTC114ET,215 1727-5131-2-ND PDTC114ET,215 PDTC114ET,215 01M8463 97W2495 PDTC114ET,215
Product Name 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC114ET,215 Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Nexperia Bipolar Pre-Biased / Digital Transistor, Brt, 50 V Rohs Compliant Nexperia Triode/MOS Tube/Transistor >> Digital Transistors
Polarity NPN NPN NPN NPN - Pre-Biased; NPN NPN
Package Type SOT23; SOT23 SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-3 SOT23
Transistor Grade / Operating Range Industrial; Automotive
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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