Nexperia B.V. PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open PDTA124TU,115

PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTC124TU

Features and benefits

• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs
• AEC-Q101 qualified

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

PDTA124T series - PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open SC-70 3-Pin Product overview: PDTA124TU,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 22 kOhm. Search-friendly keywords include transistor, BJT, switching, amplification, 22 kOhm, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTA124TU,115 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087179-PDTA124TU,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-323-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient