Nexperia B.V. 60 V, 1 A PNP/PNP low VCEsat transistor PBSS5160DS,115

Description
PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Dual low power switches (e.g. motors, fans) Automotive applications
Request a Quote Datasheet
Description
PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Dual low power switches (e.g. motors, fans) Automotive applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A PNP/PNP low VCEsat transistor - PBSS5160DS,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A PNP/PNP low VCEsat transistor
PBSS5160DS,115
60 V, 1 A PNP/PNP low VCEsat transistor PBSS5160DS,115
PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Dual low power switches (e.g. motors, fans) Automotive applications

PNP/PNP low VCEsat transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • Dual low power switches (e.g. motors, fans)
  • Automotive applications
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-3947-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-3947-1-ND
Bipolar Transistor Arrays 1727-3947-1-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 770mA 185MHz 420mW Surface Mount 6-TSOP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 770mA 185MHz 420mW Surface Mount 6-TSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-3947-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-3947-2-ND
Bipolar Transistor Arrays 1727-3947-2-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 770mA 185MHz 420mW Surface Mount 6-TSOP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 770mA 185MHz 420mW Surface Mount 6-TSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-3947-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-3947-6-ND
Bipolar Transistor Arrays 1727-3947-6-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 770mA 185MHz 420mW Surface Mount 6-TSOP

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 770mA 185MHz 420mW Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5160DS,115 - 1086503-PBSS5160DS,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5160DS,115
1086503-PBSS5160DS,115
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5160DS,115 1086503-PBSS5160DS,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086503-PBSS5160DS,1 15 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 185MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current Collector: 770mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 330mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 150 @ 500mA, 5V Maximum Power Dissipation: 420mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086503-PBSS5160DS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 185MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSOP
Maximum Current Collector: 770mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 330mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 150 @ 500mA, 5V
Maximum Power Dissipation: 420mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - PBSS5160DS,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Singapore, Singapore
60 V 1 A Bipolar Transistor
277-PBSS5160DS,115
60 V 1 A Bipolar Transistor 277-PBSS5160DS,115
PBSS5160DS - 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor TSOP 6-Pin Product overview: PBSS5160DS,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5160DS,115 can be used for catalog matching and distributor lookup.

PBSS5160DS - 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor TSOP 6-Pin Product overview: PBSS5160DS,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5160DS,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5160DS,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5160DS,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5160DS,115
TRANS 2PNP 60V 0.77A 6TSOP

TRANS 2PNP 60V 0.77A 6TSOP

Supplier's Site
Bipolar Transistor Arrays - PBSS5160DS,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
PBSS5160DS,115
Bipolar Transistor Arrays PBSS5160DS,115
TRANS 2PNP 60V 0.77A 6TSOP

TRANS 2PNP 60V 0.77A 6TSOP

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5160DS,115 1727-3947-1-ND 1086503-PBSS5160DS,115 PBSS5160DS,115 277-PBSS5160DS,115 PBSS5160DS,115 PBSS5160DS,115
Product Name 60 V, 1 A PNP/PNP low VCEsat transistor Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - PBSS5160DS,115 60 V 1 A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor Arrays
Package Type SOT457 SOT457 SC-74, SOT-457 SOT3; 6-TSOP SOT457 AEC-Q100 SC-74, SOT-457
Transistor Grade / Operating Range Automotive Automotive
Polarity PNP PNP; 2 PNP (Dual) PNP 2 PNP (Dual); PNP
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 770 milliamps 770 milliamps
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