PNP/PNP low VCEsat (BISS) double transistor in a leadless DFN2020D-6 (SOT1118D) surface-mounted package, 2 x 2 x 0.65 mm, with an exposed heat sink for thermal and electrical conductivity. Each transistor supports a collector current of 2 A and a peak collector current of 3 A, with a collector-emitter voltage rating of 60 V. Collector-emitter saturation voltage is as low as 310 mV at -1 A collector current. The device is AEC-Q101 qualified for automotive applications and suitable for Automatic Optical Inspection of solder joints.
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791390-PBSS5260PAPSX
Series: Automotive, AEC-Q101
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 6-UDFN Exposed Pad
Mounting: SMD
Power - Max: 370mW
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Family Name: PBSS5260PAPS
Categories: Discrete Semiconductor Products
Manufacturer Package: DFN2020D-6
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 110 @ 1A, 2V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6
PBSS5260PAPS - 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Product overview: PBSS5260PAPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5260PAPSX can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT PBSS5260PAPS/HUSON6/
TRANS, DUAL PNP, AEC-Q101, -60V, SOT1118D; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:510mW; DC Collector Current:-2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-1118; No. ofRoHS Compliant: Yes
TRANS 2PNP 60V 2A 6HUSON
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PBSS5260PAPSX | 791390-PBSS5260PAPSX | 1727-PBSS5260PAPSXTR-ND | 277-PBSS5260PAPSX | PBSS5260PAPSX | 99Y2063 | PBSS5260PAPSX |
| Product Name | 60 V, 2 A PNP/PNP low VCEsat double transistor | TRANSISTORS - Transistors (BJT) - Arrays - PBSS5260PAPSX | Bipolar Transistor Arrays | 60 V 2 A Bipolar Transistor | Bipolar Transistors - BJT | Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT1118D SOT1118D | SOT3 | 6-UDFN Exposed Pad | TO-3 | AEC-Q101 | ||
| Polarity | PNP | PNP | PNP | ||||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 1.00E-4 milliamps | 2000 milliamps | |||||
| Power Gain | 110 dB |
