Nexperia B.V. 60 V, 2 A PNP/PNP low VCEsat double transistor PBSS5260PAPSX

Description
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 2 A PNP/PNP low VCEsat double transistor - PBSS5260PAPSX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 2 A PNP/PNP low VCEsat double transistor
PBSS5260PAPSX
60 V, 2 A PNP/PNP low VCEsat double transistor PBSS5260PAPSX
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/NPN complement: PBSS4260PANS

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-2522-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2522-1-ND
Bipolar Transistor Arrays 1727-2522-1-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

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Bipolar Transistor Arrays - 1727-2522-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2522-2-ND
Bipolar Transistor Arrays 1727-2522-2-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

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Bipolar Transistor Arrays - 1727-2522-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2522-6-ND
Bipolar Transistor Arrays 1727-2522-6-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5260PAPSX - 791390-PBSS5260PAPSX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5260PAPSX
791390-PBSS5260PAPSX
TRANSISTORS - Transistors (BJT) - Arrays - PBSS5260PAPSX 791390-PBSS5260PAPSX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791390-PBSS5260PAPSX Series: Automotive, AEC-Q101 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 6-UDFN Exposed Pad Mounting: SMD Power - Max: 370mW Transistor Type: 2 PNP (Dual) Frequency - Transition: 100MHz Family Name: PBSS5260PAPS Categories: Discrete Semiconductor Products Manufacturer Package: DFN2020D-6 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 110 @ 1A, 2V ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791390-PBSS5260PAPSX
Series: Automotive, AEC-Q101
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 6-UDFN Exposed Pad
Mounting: SMD
Power - Max: 370mW
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Family Name: PBSS5260PAPS
Categories: Discrete Semiconductor Products
Manufacturer Package: DFN2020D-6
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 110 @ 1A, 2V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
60 V 2 A Bipolar Transistor
277-PBSS5260PAPSX
60 V 2 A Bipolar Transistor 277-PBSS5260PAPSX
PBSS5260PAPS - 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Product overview: PBSS5260PAPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5260PAPSX can be used for catalog matching and distributor lookup.

PBSS5260PAPS - 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Product overview: PBSS5260PAPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5260PAPSX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS5260PAPSX
Bipolar Transistors - BJT PBSS5260PAPSX
Bipolar Transistors - BJT PBSS5260PAPS/HUSON6/ REEL 7" Q1

Bipolar Transistors - BJT PBSS5260PAPS/HUSON6/REEL 7" Q1

Buy Now Datasheet
Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia - 99Y2063 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia
99Y2063
Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia 99Y2063
TRANS, DUAL PNP, AEC-Q101, -60V, SOT1118D; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:510mW; DC Collector Current:-2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-1118; No. ofRoHS Compliant: Yes

TRANS, DUAL PNP, AEC-Q101, -60V, SOT1118D; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:510mW; DC Collector Current:-2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-1118; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5260PAPSX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5260PAPSX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5260PAPSX
TRANS 2PNP 60V 2A 6HUSON

TRANS 2PNP 60V 2A 6HUSON

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number PBSS5260PAPSX 1727-2522-1-ND 791390-PBSS5260PAPSX 277-PBSS5260PAPSX PBSS5260PAPSX 99Y2063 PBSS5260PAPSX
Product Name 60 V, 2 A PNP/PNP low VCEsat double transistor Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - PBSS5260PAPSX 60 V 2 A Bipolar Transistor Bipolar Transistors - BJT Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP
Package Type SOT1118D 6-UDFN Exposed Pad SOT3 TO-3 AEC-Q101
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 1.00E-4 milliamps 2000 milliamps
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