PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS
Features and benefits
Applications
PBSS5260PAPS - 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Product overview: PBSS5260PAPSX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 2 A. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 2 A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-PBSS5260PAPSX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791390-PBSS5260PAPSX
Series: Automotive, AEC-Q101
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 6-UDFN Exposed Pad
Mounting: SMD
Power - Max: 370mW
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Family Name: PBSS5260PAPS
Categories: Discrete Semiconductor Products
Manufacturer Package: DFN2020D-6
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 110 @ 1A, 2V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6
TRANS 2PNP 60V 2A 6HUSON
TRANS, DUAL PNP, AEC-Q101, -60V, SOT1118D; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:510mW; DC Collector Current:-2A; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-1118; No. ofRoHS Compliant: Yes
Bipolar Transistors - BJT PBSS5260PAPS/HUSON6/
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PBSS5260PAPSX | 277-PBSS5260PAPSX | 791390-PBSS5260PAPSX | 1727-2522-1-ND | PBSS5260PAPSX | 99Y2063 | PBSS5260PAPSX |
| Product Name | 60 V, 2 A PNP/PNP low VCEsat double transistor | 60 V 2 A Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays - PBSS5260PAPSX | Bipolar Transistor Arrays | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | PNP | PNP | |||
| Package Type | SOT1118D | SOT3 | 6-UDFN Exposed Pad | AEC-Q101 | TO-3 | ||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 1.00E-4 milliamps | 2000 milliamps | |||||
| Power Gain | 110 dB |
