PNP low VCEsat (BISS) transistor for load switching and power management in battery-driven devices, housed in a DFN2020D-3 (SOT1061D) leadless SMD package measuring 2 × 2 × 0.65 mm with an exposed heat sink for thermal conductivity. It supports a maximum collector current of 3 A and peak pulsed collector current of 5 A, with a collector-emitter voltage rating of -30 V and junction temperature up to 175 °C. The device exhibits low collector-emitter saturation voltage down to 230 mV at -3 A and -300 mA base current, and is AEC-Q101 qualified for automotive use.
PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
NPN complement: PBSS4330PAS
Features and benefits
Applications
PBSS4330PAS - 30 V, 3 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5330PASX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 3 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 3 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5330PASX can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3
Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3
Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3
TRANSISTOR, BIPOLAR, AEC-Q101, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:165MHz; Power Dissipation Pd:600mW; DC Collector Current:-3A; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes
Bipolar Transistors - BJT 30V 3A PNP low VCEsat (BISS) trans
TRANS PNP 30V 3A DFN2020D-3
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS5330PASX | 276-PBSS5330PASX | 1727-2387-1-ND | 98Y2302 | PBSS5330PASX | PBSS5330PASX |
| Product Name | 30 V, 3 A PNP low VCEsat transistor | 30 V 3 A DFN Bipolar Transistor | Single Bipolar Transistors | Transistor, Bipolar, Aec-Q101, Pnp, -30V; Transistor Polarity Nexperia | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT1061D SOT1061D | 3-UDFN Exposed Pad | TO-3 | AEC-Q100 | ||
| Polarity | PNP | PNP | ||||
| Transistor Grade / Operating Range | Automotive | |||||
| IC(max) | -3000 milliamps |