Nexperia B.V. 30 V, 3 A PNP low VCEsat transistor PBSS5330PASX

Description
PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. NPN complement: PBSS4330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Description
PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. NPN complement: PBSS4330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat (BISS) transistor for load switching and power management in battery-driven devices, housed in a DFN2020D-3 (SOT1061D) leadless SMD package measuring 2 × 2 × 0.65 mm with an exposed heat sink for thermal conductivity. It supports a maximum collector current of 3 A and peak pulsed collector current of 5 A, with a collector-emitter voltage rating of -30 V and junction temperature up to 175 °C. The device exhibits low collector-emitter saturation voltage down to 230 mV at -3 A and -300 mA base current, and is AEC-Q101 qualified for automotive use.

Datasheet Summary
Powered by GS/AI

PNP low VCEsat (BISS) transistor for load switching and power management in battery-driven devices, housed in a DFN2020D-3 (SOT1061D) leadless SMD package measuring 2 × 2 × 0.65 mm with an exposed heat sink for thermal conductivity. It supports a maximum collector current of 3 A and peak pulsed collector current of 5 A, with a collector-emitter voltage rating of -30 V and junction temperature up to 175 °C. The device exhibits low collector-emitter saturation voltage down to 230 mV at -3 A and -300 mA base current, and is AEC-Q101 qualified for automotive use.

Suppliers

Company
Product
Description
Supplier Links
30 V, 3 A PNP low VCEsat transistor - PBSS5330PASX - Nexperia B.V.
Nijmegen, Netherlands
30 V, 3 A PNP low VCEsat transistor
PBSS5330PASX
30 V, 3 A PNP low VCEsat transistor PBSS5330PASX
PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. NPN complement: PBSS4330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

PNP low VCEsat transistor, encapsulated in an DFN2020D-3 (SOT1061D) ultra thin leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.

NPN complement: PBSS4330PAS

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • High temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Leadless small SMD plastic package with soldarable side pads
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Suitable for Automatic Optical Inspection (AOI) of solder joint

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Singapore, Singapore
30 V 3 A DFN Bipolar Transistor
276-PBSS5330PASX
30 V 3 A DFN Bipolar Transistor 276-PBSS5330PASX
PBSS4330PAS - 30 V, 3 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5330PASX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 3 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 3 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5330PASX can be used for catalog matching and distributor lookup.

PBSS4330PAS - 30 V, 3 A PNP low VCEsat (BISS) transistor DFN 3-Pin Product overview: PBSS5330PASX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 3 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 3 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS5330PASX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2387-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2387-1-ND
Single Bipolar Transistors 1727-2387-1-ND
Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3

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Single Bipolar Transistors - 1727-2387-6-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2387-6-ND
Single Bipolar Transistors 1727-2387-6-ND
Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3

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Single Bipolar Transistors - 1727-2387-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2387-2-ND
Single Bipolar Transistors 1727-2387-2-ND
Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor PNP 30V 3A 165MHz 600mW Surface Mount DFN2020D-3

Buy Now Datasheet
Transistor, Bipolar, Aec-Q101, Pnp, -30V; Transistor Polarity Nexperia - 98Y2302 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Aec-Q101, Pnp, -30V; Transistor Polarity Nexperia
98Y2302
Transistor, Bipolar, Aec-Q101, Pnp, -30V; Transistor Polarity Nexperia 98Y2302
TRANSISTOR, BIPOLAR, AEC-Q101, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:165MHz; Power Dissipation Pd:600mW; DC Collector Current:-3A; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, AEC-Q101, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:165MHz; Power Dissipation Pd:600mW; DC Collector Current:-3A; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5330PASX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5330PASX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5330PASX
TRANS PNP 30V 3A DFN2020D-3

TRANS PNP 30V 3A DFN2020D-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS5330PASX
Bipolar Transistors - BJT PBSS5330PASX
Bipolar Transistors - BJT 30V 3A PNP low VCEsat (BISS) trans

Bipolar Transistors - BJT 30V 3A PNP low VCEsat (BISS) trans

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS5330PASX 276-PBSS5330PASX 1727-2387-1-ND 98Y2302 PBSS5330PASX PBSS5330PASX
Product Name 30 V, 3 A PNP low VCEsat transistor 30 V 3 A DFN Bipolar Transistor Single Bipolar Transistors Transistor, Bipolar, Aec-Q101, Pnp, -30V; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Package Type SOT1061D SOT1061D 3-UDFN Exposed Pad TO-3 AEC-Q100
Polarity PNP PNP
Transistor Grade / Operating Range Automotive
IC(max) -3000 milliamps
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