Nexperia B.V. 60 V, 1 A PNP/PNP low VCEsat transistor PBSS5160PAPSX

Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
  • 60 V, 1 A PNP/PNP low VCEsat transistor - PBSS5160PAPSX - Nexperia B.V.
    Nexperia B.V.
  • Bipolar Transistor Arrays - 1727-2384-6-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays - 1727-2384-2-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays - 1727-2384-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5160PAPSX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia - 99Y2062 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A PNP/PNP low VCEsat transistor - PBSS5160PAPSX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A PNP/PNP low VCEsat transistor
PBSS5160PAPSX
60 V, 1 A PNP/PNP low VCEsat transistor PBSS5160PAPSX
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans)

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High energy efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-2384-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2384-6-ND
Bipolar Transistor Arrays 1727-2384-6-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-2384-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2384-2-ND
Bipolar Transistor Arrays 1727-2384-2-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-2384-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-2384-1-ND
Bipolar Transistor Arrays 1727-2384-1-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 370mW Surface Mount DFN2020D-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 1A 125MHz 370mW Surface Mount DFN2020D-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS5160PAPSX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS5160PAPSX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS5160PAPSX
IC TRANS PNP/PNP 60V SOT1118

IC TRANS PNP/PNP 60V SOT1118

Supplier's Site
Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia - 99Y2062 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia
99Y2062
Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia 99Y2062
TRANS, DUAL PNP, AEC-Q101, -60V, SOT1118D; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:510mW; DC Collector Current:-1A; DC Current Gain hFE:70hFE; Transistor Case Style:SOT-1118; No. ofRoHS Compliant: Yes

TRANS, DUAL PNP, AEC-Q101, -60V, SOT1118D; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:510mW; DC Collector Current:-1A; DC Current Gain hFE:70hFE; Transistor Case Style:SOT-1118; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Transistors
Product Number PBSS5160PAPSX 1727-2384-6-ND PBSS5160PAPSX 99Y2062
Product Name 60 V, 1 A PNP/PNP low VCEsat transistor Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Dual Pnp, Aec-Q101, -60V, Sot1118D; Transistor Polarity Nexperia
Polarity PNP PNP PNP
Package Type SOT1118D 6-UDFN Exposed Pad DFN2020D-6 TO-3
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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