50 V, 100 mA PNP resistor-equipped transistor in an ultra small DFN1412D-3 (SOT8009) leadless SMD plastic package with side-wettable flanks, featuring built-in bias resistors of 10 kΩ each, a maximum collector-emitter voltage of -50 V, and a maximum power dissipation of 360 mW on a standard 35 µm copper FR4 PCB. The device has a low profile of 0.5 mm and is suitable for Automatic Optical Inspection. It meets the JEDEC MO-340CA standard and is complemented by the PDTC114EQC NPN variant.
100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1.Product overview
Type number
-
R1
-
R2
-
Package
-
NPN complement:
kΩ
-
kΩ
-
Nexperia
-
JEDEC
PDTA143EQC
4.7
4.7
SOT8009
MO-340CA
PDTC143EQC
PDTA114EQC
10
10
PDTC114EQC
PDTA124EQC
22
22
PDTC124EQC
PDTA144EQC
47
47
PDTC144EQC
Features and benefits
Applications
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 360mW Surface Mount, Wettable Flank DFN1412D-3
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 180MHz 360mW Surface Mount, Wettable Flank DFN1412D-3
Resistor-Equipped Transistor
Resistor-Equipped Transistor
Resistor-Equipped Transistor
PDTA114 - PNP resistor-equipped transistor
TRANS PREBIAS PNP 50V 0.1A 3DFN
| Nexperia B.V. | DigiKey | RS Components, Ltd. | Rochester Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | PDTA114EQCZ | 1727-PDTA114EQCZCT-ND | 2434643 | PDTA114EQCZ | PDTA114EQCZ |
| Product Name | 50 V, 100 mA PNP resistor-equipped transistors | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT8009 SOT8009 | 3-XDFN Exposed Pad | DFN1412D-3 | SOT8009 |
