Nexperia B.V. NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ PDTC114EMB,315

Description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
  • NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ - PDTC114EMB,315 - Nexperia B.V.
    Nexperia B.V.
  • Single, Pre-Biased Bipolar Transistors - PDTC114EMB,315-ND - DigiKey
    DigiKey
  • PDTC114EMB,315 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTC114EMB,315 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Rf Transistor Rohs Compliant Nexperia - 29AK3106 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ - PDTC114EMB,315 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
PDTC114EMB,315
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ PDTC114EMB,315
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB. Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design Leadless ultra small SMD plastic package Low package height of 0.37 mm AEC-Q101 qualified Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB.

Features and benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • Leadless ultra small SMD plastic package
  • Low package height of 0.37 mm
  • AEC-Q101 qualified

Applications

  • Low-current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
  • Mobile applications
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - PDTC114EMB,315-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
PDTC114EMB,315-ND
Single, Pre-Biased Bipolar Transistors PDTC114EMB,315-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount DFN1006B-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount DFN1006B-3

Buy Now Datasheet
- PDTC114EMB,315 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PDTC114EMB,315
PDTC114EMB,315
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PDTC114EMB,315 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTC114EMB,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTC114EMB,315
TRANS PREBIAS NPN 50V 0.1A 3DFN

TRANS PREBIAS NPN 50V 0.1A 3DFN

Supplier's Site
Rf Transistor Rohs Compliant Nexperia - 29AK3106 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK3106
Rf Transistor Rohs Compliant Nexperia 29AK3106
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number PDTC114EMB,315 PDTC114EMB,315-ND PDTC114EMB,315 PDTC114EMB,315 29AK3106
Product Name NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor Rohs Compliant Nexperia
Polarity NPN NPN NPN
Package Type SOT883B 3-XFDFN SOT883B 3-XFDFN TO-3
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)
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