NPN resistor-equipped transistor with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ in a leadless ultra small DFN1006B-3 (SOT883B) surface-mounted package measuring 1.0 × 0.6 × 0.37 mm. It has a maximum collector current of 100 mA, a collector-emitter voltage rating of 50 V, and a total power dissipation of 250 mW at 25°C ambient temperature. The device is AEC-Q101 qualified for automotive applications.
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114EMB.
Features and benefits
Applications
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230MHz 250mW Surface Mount DFN1006B-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RF TRANSISTOR ROHS COMPLIANT: YES
TRANS PREBIAS NPN 50V 0.1A 3DFN
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | PDTC114EMB,315 | PDTC114EMB,315-ND | PDTC114EMB,315 | 29AK3106 | PDTC114EMB,315 |
| Product Name | NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | Single, Pre-Biased Bipolar Transistors | Rf Transistor Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT883B SOT883B | 3-XFDFN | SOT883B | TO-3 | 3-XFDFN |
| Polarity | NPN | NPN | |||
| Transistor Grade / Operating Range | Automotive | ||||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) |
