Infineon Technologies AG Single FETs, MOSFETs IMLT65R075M2HXTMA1

The IMLT65R075M2H is a 650 V Silicon Carbide MOSFET in a PG-HDSOP-16 package designed for high-efficiency power conversion applications such as SMPS, solar inverters, and EV charging. It features a typical on-resistance of 75 mΩ, a gate threshold voltage of 4.5 V, and a peak drain current of 74 A. The device supports robust operation under hard commutation and parasitic turn-on suppression with 0 V turn-off gate voltage. It is qualified for industrial use according to JEDEC JESD47, JESD22, and J-STD-020 standards. The part has a maximum operating junction temperature of 175 °C and a power dissipation limit of 187 W at 25 °C.