Infineon Technologies AG Power - IGBT - IGBT Discretes - IKY100N120CH7 IKY100N120CH7

Description
Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers. Summary of Features Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, very soft and low Qrr Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior Offering Tj(max) of 175 °C Benefits Technology with the highest power density with up to 140 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Highest power density with heat dissipation capability of TO-247PLUS vs TO-247 Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)
  • Power - IGBT - IGBT Discretes - IKY100N120CH7 - IKY100N120CH7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers. Summary of Features Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, very soft and low Qrr Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior Offering Tj(max) of 175 °C Benefits Technology with the highest power density with up to 140 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Highest power density with heat dissipation capability of TO-247PLUS vs TO-247 Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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The IKY100N120CH7 is a 1200 V, 100 A TRENCHSTOP IGBT 7 discrete device co-packed with a soft-recovery diode, designed for high-efficiency hard-switching applications such as industrial UPS, EV charging, and string inverters. It is housed in a TO-247PLUS-4 package measuring 21.10 mm x 15.90 mm x 5.10 mm. The device has a maximum junction temperature of 175°C, a collector-emitter saturation voltage of 1.7 V at 25°C, and a gate-emitter threshold voltage of 4.7 V to 6.2 V. The diode has a reverse recovery time of 99 ns and a reverse recovery charge of 3.09 µC at 25°C. It is RoHS compliant and qualified for industrial applications according to JEDEC standards.

Datasheet Summary
Powered by GS/AI

The IKY100N120CH7 is a 1200 V, 100 A TRENCHSTOP IGBT 7 discrete device co-packed with a soft-recovery diode, designed for high-efficiency hard-switching applications such as industrial UPS, EV charging, and string inverters. It is housed in a TO-247PLUS-4 package measuring 21.10 mm x 15.90 mm x 5.10 mm. The device has a maximum junction temperature of 175°C, a collector-emitter saturation voltage of 1.7 V at 25°C, and a gate-emitter threshold voltage of 4.7 V to 6.2 V. The diode has a reverse recovery time of 99 ns and a reverse recovery charge of 3.09 µC at 25°C. It is RoHS compliant and qualified for industrial applications according to JEDEC standards.

Suppliers

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Supplier Links
Power - IGBT - IGBT Discretes - IKY100N120CH7 - IKY100N120CH7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Discretes - IKY100N120CH7
IKY100N120CH7
Power - IGBT - IGBT Discretes - IKY100N120CH7 IKY100N120CH7
Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers. Summary of Features Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, very soft and low Qrr Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior Offering Tj(max) of 175 °C Benefits Technology with the highest power density with up to 140 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Highest power density with heat dissipation capability of TO-247PLUS vs TO-247 Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin Applications EV charging Photovoltaic Uninterruptible power supplies (UPS)

Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.


Summary of Features

  • Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, very soft and low Qrr
  • Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
  • Offering Tj(max) of 175 °C

Benefits

  • Technology with the highest power density with up to 140 A rating
  • Optimized performance in application conditions
  • Lowest conduction losses
  • Lowest switching losses
  • Humidity robustness under harsh environment
  • Improved EMI performance
  • Highest power density with heat dissipation capability of TO-247PLUS vs TO-247
  • Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin

Applications

  • EV charging
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IKY100N120CH7
Product Name Power - IGBT - IGBT Discretes - IKY100N120CH7
VCE(on) 1200 volts
Switching Speed 16 to 100 kHz
tr 20 ns
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