IKWH30N65WR6 is a 650 V, 30 A reverse-conducting IGBT with an integrated monolithic diode in a TO-247-3-HCC package, designed for PFC and welding applications. It features a pin-to-pin creepage distance greater than 4.8 mm and clearance greater than 3.4 mm for enhanced reliability against contamination. The IGBT has a collector-emitter saturation voltage of 1.45 V to 1.75 V at 25 °C, and a positive temperature coefficient of V₌Esat for parallel switching. The diode has a forward voltage of 1.3 to 1.6 V at 10 A and 25 °C, with reverse recovery time of 82 ns to 94 ns. Operating junction temperature ranges from −40 °C to 175 °C. The device is qualified for industrial applications according to JEDEC J-STD-033B.1. Packaging dimensions for PG-TO247-3-STD-NN4.8
650 V, 30 A IGBT with anti-parallel diode in TO-247-3-HCC package
High speed 650 V, 30 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creepage distances.
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TO-247-3 IGBT Transistors / Modules ROHS
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors |
| Product Number | IKWH30N65WR6 | IKWH30N65WR6 |
| Product Name | IGBT Discretes | Transistors |
| VCE(on) | 650 volts | |
| Switching Speed | 20 to 75 kHz | |
| tr | 18 ns |
