IKWH40N67PR7 is a 670 V, 40 A reverse conducting IGBT in a TO-247-3pin high creepage package, optimized for boost PFC applications. It features a typical collector-emitter saturation voltage of 1.4 V at 25°C, a pin-to-pin creepage distance greater than 4.8 mm, and a clearance distance greater than 3.4 mm. The device has a positive temperature coefficient of V<sub>CEsat</sub> for easy paralleling, improved EMI behavior with reduced dv/dt, and a thermal resistance from junction to case of 0.72 to 0.93 K/W. It is qualified for industrial applications per JEDEC JESD47, JESD20, and JESD22.
670 V, 40 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the successor of TRENCHSTOP™ IGBT 5 with improved EMI characteristics, best-in-class reliability and robustness, offering the advanced performance and even better price-performance for high power and high switching frequency applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKWH40N67PR7 |
| Product Name | Power - IGBT - IGBT Discretes - IKWH40N67PR7 |
| VCE(on) | 670 volts |
| Switching Speed | 20 to 65 kHz |
| tr | 15 ns |
