Infineon Technologies AG IGBT Discretes IKP40N65F5

Description
High Speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) system Industrial heating and welding Applications Telecommunication infrastructure
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Description
High Speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) system Industrial heating and welding Applications Telecommunication infrastructure
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKP40N65F5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKP40N65F5
IGBT Discretes IKP40N65F5
High Speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) system Industrial heating and welding Applications Telecommunication infrastructure

High Speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.


Summary of Features

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduction in switching losses
  • 200mV reduction in VCEsat
  • Co-packed with Rapid Si-diode technology
  • Low COES/EOSS
  • Mild positive temperature coefficient VCEsat
  • Temperature stability of Vf

Benefits

  • Best-in-class efficiency, resulting in lower junction and
    case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising
    reliability
  • Higher power density design

Potential Applications

  • Uninterruptible power supply (UPS) system
  • Industrial heating and welding

Applications

  • Telecommunication infrastructure
Supplier's Site Datasheet
Transistors - IKP40N65F5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IKP40N65F5
Transistors IKP40N65F5
IGBT Transistors INDUSTRY 14

IGBT Transistors INDUSTRY 14

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IKP40N65F5
IGBT Transistors IKP40N65F5
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IKP40N65F5 IKP40N65F5 IKP40N65F5
Product Name IGBT Discretes Transistors IGBT Transistors
VCE(on) 650 volts
Switching Speed 60 to 120 kHz
tr 13 ns
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