Infineon Technologies AG IGBT Discretes IKW40N65H5

Description
650 V IGBT with anti-parallel diode in TO-247 package High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) Industrial heating and welding Applications Bringing a whole new lifestyle and health experience to today’s connected citizen Energy Storage Systems Residential air conditioning: Smart (IoT) and efficient cooling Uninterruptible power supplies (UPS) Designers who used this product also designed with IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET
  • IGBT Discretes - IKW40N65H5 - Infineon Technologies AG
    Infineon Technologies AG
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Description
650 V IGBT with anti-parallel diode in TO-247 package High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) Industrial heating and welding Applications Bringing a whole new lifestyle and health experience to today’s connected citizen Energy Storage Systems Residential air conditioning: Smart (IoT) and efficient cooling Uninterruptible power supplies (UPS) Designers who used this product also designed with IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET
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Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKW40N65H5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKW40N65H5
IGBT Discretes IKW40N65H5
650 V IGBT with anti-parallel diode in TO-247 package High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of Features 650 V breakthrough voltage Compared to best-in-class HighSpeed 3 family Factor 2.5 lower Qg Factor 2 reduction in switching losses 200mV reduction in VCEsat Co-packed with Rapid Si-diode technology Low COES/EOSS Mild positive temperature coefficient VCEsat Temperature stability of Vf Benefits Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability 50 V increase in the bus voltage possible without compromising reliability Higher power density design Potential Applications Uninterruptible power supply (UPS) Industrial heating and welding Applications Bringing a whole new lifestyle and health experience to today’s connected citizen Energy Storage Systems Residential air conditioning: Smart (IoT) and efficient cooling Uninterruptible power supplies (UPS) Designers who used this product also designed with IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFP4468 | N-Channel Power MOSFET IPW65R041CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET

650 V IGBT with anti-parallel diode in TO-247 package

High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.


Summary of Features

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Qg
  • Factor 2 reduction in switching losses
  • 200mV reduction in VCEsat
  • Co-packed with Rapid Si-diode technology
  • Low COES/EOSS
  • Mild positive temperature coefficient VCEsat
  • Temperature stability of Vf

Benefits

  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design

Potential Applications

  • Uninterruptible power supply (UPS)
  • Industrial heating and welding

Applications

  • Bringing a whole new lifestyle and health experience to today’s connected citizen
  • Energy Storage Systems
  • Residential air conditioning: Smart (IoT) and efficient cooling
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IRFP4468 |
    N-Channel Power MOSFET
  • IPW65R041CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRFP4468 |
    N-Channel Power MOSFET
  • IPW65R041CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRFP4468 |
    N-Channel Power MOSFET
  • IPW65R041CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
650V 74A 250W IGBT Transistor
279-IKW40N65H5
650V 74A 250W IGBT Transistor 279-IKW40N65H5
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-247 Tube Product overview: IKW40N65H5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 74A, 250W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 74A, 250W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW40N65H5 can be used for catalog matching and distributor lookup.

Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-247 Tube Product overview: IKW40N65H5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 74A, 250W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 74A, 250W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW40N65H5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKW40N65H5
IGBT Transistors IKW40N65H5
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

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Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKW40N65H5 279-IKW40N65H5 IKW40N65H5
Product Name IGBT Discretes 650V 74A 250W IGBT Transistor IGBT Transistors
VCE(on) 650 volts
Switching Speed 30 to 100 kHz
tr 12 ns
tf 13 ns
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