Infineon Technologies AG Single IGBTs IKQ150N75EH7XKSA1

The IKQ150N75EH7 is a 750 V IGBT with a 150 A collector current rating, co-packed with a soft and fast recovery emitter-controlled diode, designed for hard switching and two- or three-level topologies in industrial UPS, EV charging, string inverters, and energy storage systems. It uses the TO-247PLUS-3 package, measuring 20.90-21.10 mm in length and 15.70-15.90 mm in width, with a maximum junction temperature of 175 °C. The device exhibits a typical collector-emitter saturation voltage of 1.75 V at 150 A and 175 °C, a gate-emitter threshold voltage of 4.0 V, and a total switching energy of 10.7 mJ at 175 °C. Thermal resistance from junction to case is 0.24 K/W for the IGBT and 0.33 K/W for the diode. The product is qualified for industrial applications per JEDEC47/20/22 and meets RoHS requirements.