Infineon Technologies AG IGBT Discretes IKWH60N65WR6

Description
650 V, 60 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 60 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creepage distances. Summary of Features Lowest VCEsat 1.4 V at 25°C Monolithically integrated diode Lowest Esw High creepage & clearance package Benefits Improved price performance ratio Optimized diode for PFC and welding applications Lowest switching losses improved reliability against package contamination Applications Residential air conditioning: Smart (IoT) and efficient cooling
  • IGBT Discretes - IKWH60N65WR6 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IKWH60N65WR6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
650 V, 60 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 60 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creepage distances. Summary of Features Lowest VCEsat 1.4 V at 25°C Monolithically integrated diode Lowest Esw High creepage & clearance package Benefits Improved price performance ratio Optimized diode for PFC and welding applications Lowest switching losses improved reliability against package contamination Applications Residential air conditioning: Smart (IoT) and efficient cooling
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Datasheet
Datasheet Summary
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IKWH60N65WR6 is a 650 V, 60 A reverse conducting IGBT with a monolithically integrated diode in a PG-TO247-3-STD-NN4.8 package, designed for PFC and welding applications. It features a pin-to-pin creepage distance greater than 4.8 mm and clearance greater than 3.4 mm for enhanced reliability against contamination. The device exhibits a typical collector-emitter saturation voltage of 1.85 V at 25 °C and 1.8 V at 175 °C, with a positive temperature coefficient enabling easy paralleling. The diode has a forward voltage of 1.6 V at 25 °C and a reverse recovery time of 92 ns. Thermal resistance from junction to case is 0.6 K/W for the IGBT and 2.3 K/W for the diode. The part is qualified for industrial applications according to JEDEC47/20/22 standards.

Datasheet Summary
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IKWH60N65WR6 is a 650 V, 60 A reverse conducting IGBT with a monolithically integrated diode in a PG-TO247-3-STD-NN4.8 package, designed for PFC and welding applications. It features a pin-to-pin creepage distance greater than 4.8 mm and clearance greater than 3.4 mm for enhanced reliability against contamination. The device exhibits a typical collector-emitter saturation voltage of 1.85 V at 25 °C and 1.8 V at 175 °C, with a positive temperature coefficient enabling easy paralleling. The diode has a forward voltage of 1.6 V at 25 °C and a reverse recovery time of 92 ns. Thermal resistance from junction to case is 0.6 K/W for the IGBT and 2.3 K/W for the diode. The part is qualified for industrial applications according to JEDEC47/20/22 standards.

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKWH60N65WR6 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKWH60N65WR6
IGBT Discretes IKWH60N65WR6
650 V, 60 A IGBT with anti-parallel diode in TO-247-3-HCC package High speed 650 V, 60 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creepage distances. Summary of Features Lowest VCEsat 1.4 V at 25°C Monolithically integrated diode Lowest Esw High creepage & clearance package Benefits Improved price performance ratio Optimized diode for PFC and welding applications Lowest switching losses improved reliability against package contamination Applications Residential air conditioning: Smart (IoT) and efficient cooling

650 V, 60 A IGBT with anti-parallel diode in TO-247-3-HCC package

High speed 650 V, 60 A reverse conducting TRENCHSTOP™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creepage distances.


Summary of Features

  • Lowest VCEsat 1.4 V at 25°C
  • Monolithically integrated diode
  • Lowest Esw
  • High creepage & clearance package

Benefits

  • Improved price performance ratio
  • Optimized diode for PFC and welding applications
  • Lowest switching losses
  • improved reliability against package contamination

Applications

  • Residential air conditioning: Smart (IoT) and efficient cooling
Supplier's Site Datasheet
Transistors - IKWH60N65WR6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IKWH60N65WR6
Transistors IKWH60N65WR6
TO-247-3 IGBT Transistors / Modules ROHS

TO-247-3 IGBT Transistors / Modules ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IKWH60N65WR6 IKWH60N65WR6
Product Name IGBT Discretes Transistors
VCE(on) 650 volts
Switching Speed 20 to 75 kHz
tr 28 ns
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