The IKW50N120CS7 is a 1200 V, 50 A IGBT with an integrated soft and fast recovery emitter-controlled diode in a PG-TO247-3 package. It has a collector-emitter saturation voltage of 2.0 V at 175 °C, a short circuit withstand time of 8 µs, and a maximum junction temperature of 175 °C. The device has a thermal resistance from junction to ambient of 40 K/W and junction-to-case thermal resistance of 0.25-0.35 K/W for the IGBT and 0.45-0.60 K/W for the diode. It is qualified for industrial applications according to JEDEC JESD47/20/22.
1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package
Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKW50N120CS7 |
| Product Name | IGBT Discretes |
| VCE(on) | 1200 volts |
| Switching Speed | 2 to 20 kHz |
| tr | 19 ns |
