Infineon Technologies AG IGBT Discretes IKW50N120CS7

Description
1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses. Summary of Features Very low VCEsat Good controllability Full rated free wheeling diode with improved softness Robustness against harsh condition and HV-H3TRB 8 us short circuit time very tight parameter distribution Maximum operating Tj of 175°C Benefits Lowest losses on IGBT, high system efficiency for higher power output Higher power density without heatsink redesign Fast and easy replacement of predecessor T2 portfolio High device reliabiity in harsh operating condition Ease to design to meet EMI requirement Applications 1-phase string inverter solutions In-Cabin Wireless Charging Motor Control Servo motor drive and control Uninterruptible power supplies (UPS)
  • IGBT Discretes - IKW50N120CS7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses. Summary of Features Very low VCEsat Good controllability Full rated free wheeling diode with improved softness Robustness against harsh condition and HV-H3TRB 8 us short circuit time very tight parameter distribution Maximum operating Tj of 175°C Benefits Lowest losses on IGBT, high system efficiency for higher power output Higher power density without heatsink redesign Fast and easy replacement of predecessor T2 portfolio High device reliabiity in harsh operating condition Ease to design to meet EMI requirement Applications 1-phase string inverter solutions In-Cabin Wireless Charging Motor Control Servo motor drive and control Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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The IKW50N120CS7 is a 1200 V, 50 A IGBT with an integrated soft and fast recovery emitter-controlled diode in a PG-TO247-3 package. It has a collector-emitter saturation voltage of 2.0 V at 175 °C, a short circuit withstand time of 8 µs, and a maximum junction temperature of 175 °C. The device has a thermal resistance from junction to ambient of 40 K/W and junction-to-case thermal resistance of 0.25-0.35 K/W for the IGBT and 0.45-0.60 K/W for the diode. It is qualified for industrial applications according to JEDEC JESD47/20/22.

Datasheet Summary
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The IKW50N120CS7 is a 1200 V, 50 A IGBT with an integrated soft and fast recovery emitter-controlled diode in a PG-TO247-3 package. It has a collector-emitter saturation voltage of 2.0 V at 175 °C, a short circuit withstand time of 8 µs, and a maximum junction temperature of 175 °C. The device has a thermal resistance from junction to ambient of 40 K/W and junction-to-case thermal resistance of 0.25-0.35 K/W for the IGBT and 0.45-0.60 K/W for the diode. It is qualified for industrial applications according to JEDEC JESD47/20/22.

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IGBT Discretes - IKW50N120CS7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKW50N120CS7
IGBT Discretes IKW50N120CS7
1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses. Summary of Features Very low VCEsat Good controllability Full rated free wheeling diode with improved softness Robustness against harsh condition and HV-H3TRB 8 us short circuit time very tight parameter distribution Maximum operating Tj of 175°C Benefits Lowest losses on IGBT, high system efficiency for higher power output Higher power density without heatsink redesign Fast and easy replacement of predecessor T2 portfolio High device reliabiity in harsh operating condition Ease to design to meet EMI requirement Applications 1-phase string inverter solutions In-Cabin Wireless Charging Motor Control Servo motor drive and control Uninterruptible power supplies (UPS)

1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package

Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.


Summary of Features

  • Very low VCEsat
  • Good controllability
  • Full rated free wheeling diode with improved softness
  • Robustness against harsh condition and HV-H3TRB
  • 8 us short circuit time
  • very tight parameter distribution
  • Maximum operating Tj of 175°C

Benefits

  • Lowest losses on IGBT, high system efficiency for higher power output
  • Higher power density without heatsink redesign
  • Fast and easy replacement of predecessor T2 portfolio
  • High device reliabiity in harsh operating condition
  • Ease to design to meet EMI requirement

Applications

  • 1-phase string inverter solutions
  • In-Cabin Wireless Charging
  • Motor Control
  • Servo motor drive and control
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IKW50N120CS7
Product Name IGBT Discretes
VCE(on) 1200 volts
Switching Speed 2 to 20 kHz
tr 19 ns
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