The IKW08N120CS7 is a 1200 V, 8 A TRENCHSTOP IGBT 7 with a co-packed soft and fast recovery emitter-controlled diode in a PG-TO247-3 package measuring 20.70 to 21.50 mm in length and 15.50 to 16.30 mm in width. It features a collector-emitter saturation voltage of 2.00 V at 175 °C, a short circuit ruggedness of 8 µs, and a maximum junction temperature of 175 °C. The device has a thermal resistance from junction to case of 1.05 to 1.42 K/W for the IGBT and 1.80 to 2.40 K/W for the diode, and is qualified for industrial applications according to JEDEC J-STD-001, JESD22, and JESD47 standards.
1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package
Hard-switching 1200 V, 8 A TRENCHSTOP™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKW08N120CS7 |
| Product Name | IGBT Discretes |
| VCE(on) | 1200 volts |
| Switching Speed | 2 to 20 kHz |
| tr | 15 ns |
