The IKWH60N67PR7 is a 670 V, 60 A reverse conducting IGBT in a TO-247-3 pin package with a pin-to-pin creepage distance greater than 4.8 mm and clearance greater than 3.4 mm, optimized for boost PFC applications. It features a typical collector-emitter saturation voltage of 1.4 V at 25°C, a positive temperature coefficient of V_CE(sat), and improved EMI characteristics with lower dv/dt. The device has a junction temperature range of -40°C to 175°C, a thermal resistance junction-to-case of 0.53 to 0.69 K/W, and is qualified for industrial applications per JEDEC JESD47/20/22.
670 V, 60 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the successor of TRENCHSTOP™ IGBT 5 with improved EMI characteristics, best-in-class reliability and robustness, offering the advanced performance and even better price-performance for high power and high switching frequency applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKWH60N67PR7 |
| Product Name | Power - IGBT - IGBT Discretes - IKWH60N67PR7 |
| VCE(on) | 670 volts |
| Switching Speed | 20 to 65 kHz |
| tr | 24 ns |
