IKWH50N67PR7 is a 670 V, 50 A reverse conducting TRENCHSTOP IGBT 7 PR7 in a TO-247-3 pin package with a pin-to-pin creepage distance greater than 4.8 mm and clearance greater than 3.4 mm, designed for boost PFC stages in HVAC and air conditioning applications. It features a typical collector-emitter saturation voltage of 1.4 V at 25°C, a positive temperature coefficient of V<sub>CEsat</sub> for easy paralleling, and optimized monolithic diode performance. The device meets JEDEC JESD47/20/22 qualification for industrial use, has a junction temperature range of -40°C to 175°C, and offers improved EMI characteristics with lower dv/dt. Thermal resistance from junction to case is 0.61 to 0.79 K/W.
670 V, 50 A TRENCHSTOP™ IGBT7 PR7 in TO-247-3pin high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the successor of TRENCHSTOP™ IGBT 5 with improved EMI characteristics, best-in-class reliability and robustness, offering the advanced performance and even better price-performance for high power and high switching frequency applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKWH50N67PR7 |
| Product Name | Power - IGBT - IGBT Discretes - IKWH50N67PR7 |
| VCE(on) | 670 volts |
| Switching Speed | 20 to 65 kHz |
| tr | 19 ns |
