Infineon Technologies AG IGBT Discretes IKW50N60H3

Description
600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, meaning further improvement in switching losses Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Applications Commercial HVAC Residential air conditioning: Smart (IoT) and efficient cooling Smart induction cooktop – precise and efficient heating control Designers who used this product also designed with IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes
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Description
600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, meaning further improvement in switching losses Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Applications Commercial HVAC Residential air conditioning: Smart (IoT) and efficient cooling Smart induction cooktop – precise and efficient heating control Designers who used this product also designed with IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes
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Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKW50N60H3 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKW50N60H3
IGBT Discretes IKW50N60H3
600 V IGBT with anti-parallel diode in TO-247 package High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features Low switching losses for high efficiency Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, meaning further improvement in switching losses Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour Short circuit capability 5µs Offering Tj(max) of 175°C Packaged with and without freewheeling diode for increased design freedom Benefits Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 600 V IGBT efficiency and EMI behavior Applications Commercial HVAC Residential air conditioning: Smart (IoT) and efficient cooling Smart induction cooktop – precise and efficient heating control Designers who used this product also designed with IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes IRS44273L | Gate driver ICs IRS4427S | Gate driver ICs IDV20E65D1 | Silicon Diodes IDW60C65D1 | Silicon Diodes

600 V IGBT with anti-parallel diode in TO-247 package

High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.


Summary of Features

  • Low switching losses for high efficiency
  • Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5µs
  • Offering Tj(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

Benefits

  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior

Applications

  • Commercial HVAC
  • Residential air conditioning: Smart (IoT) and efficient cooling
  • Smart induction cooktop – precise and efficient heating control

Designers who used this product also designed with


  • IRS44273L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDV20E65D1 |
    Silicon Diodes
  • IDW60C65D1 |
    Silicon Diodes
  • IRS44273L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDV20E65D1 |
    Silicon Diodes
  • IDW60C65D1 |
    Silicon Diodes
  • IRS44273L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDV20E65D1 |
    Silicon Diodes
  • IDW60C65D1 |
    Silicon Diodes
Supplier's Site Datasheet
IGBTs - Single - IKW50N60H3 - 088070-IKW50N60H3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKW50N60H3
088070-IKW50N60H3
IGBTs - Single - IKW50N60H3 088070-IKW50N60H3
Manufacturer: Infineon Technologies Win Source Part Number: 088070-IKW50N60H3 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 130ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 315nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO247-3 Maximum Current Collector: 100A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 333W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 50A Total Switching Energy(Ets): 2.36mJ Turn-on and Turn-off delay time: 23ns/235ns Testing Conditions: 400V, 50A, 7 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 088070-IKW50N60H3
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 130ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 315nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 100A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 333W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 50A
Total Switching Energy(Ets): 2.36mJ
Turn-on and Turn-off delay time: 23ns/235ns
Testing Conditions: 400V, 50A, 7 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
600V 100A 333W IGBT Transistor
279-IKW50N60H3
600V 100A 333W IGBT Transistor 279-IKW50N60H3
Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube Product overview: IKW50N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 100A, 333W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 100A, 333W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW50N60H3 can be used for catalog matching and distributor lookup.

Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube Product overview: IKW50N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 100A, 333W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 100A, 333W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW50N60H3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - IKW50N60H3 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IKW50N60H3
Transistors IKW50N60H3
IGBT Transistors HIGH SPEED SWITCHING

IGBT Transistors HIGH SPEED SWITCHING

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IKW50N60H3
IGBT Transistors IKW50N60H3
IGBT Transistors HIGH SPEED SWITCHING

IGBT Transistors HIGH SPEED SWITCHING

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IKW50N60H3 088070-IKW50N60H3 279-IKW50N60H3 IKW50N60H3 IKW50N60H3
Product Name IGBT Discretes IGBTs - Single - IKW50N60H3 600V 100A 333W IGBT Transistor Transistors IGBT Transistors
VCE(on) 600 volts 2.3 volts
Switching Speed 20 to 100 kHz
tr 37 ns
tf 24 ns
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