600 V IGBT with anti-parallel diode in TO-247 package
High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
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Manufacturer: Infineon Technologies
Win Source Part Number: 088070-IKW50N60H3
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 130ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 315nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 100A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 333W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 50A
Total Switching Energy(Ets): 2.36mJ
Turn-on and Turn-off delay time: 23ns/235ns
Testing Conditions: 400V, 50A, 7 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube Product overview: IKW50N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 100A, 333W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 100A, 333W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW50N60H3 can be used for catalog matching and distributor lookup.
IGBT Transistors HIGH SPEED SWITCHING
IGBT Transistors HIGH SPEED SWITCHING
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IKW50N60H3 | 088070-IKW50N60H3 | 279-IKW50N60H3 | IKW50N60H3 | IKW50N60H3 |
| Product Name | IGBT Discretes | IGBTs - Single - IKW50N60H3 | 600V 100A 333W IGBT Transistor | Transistors | IGBT Transistors |
| VCE(on) | 600 volts | 2.3 volts | |||
| Switching Speed | 20 to 100 kHz | ||||
| tr | 37 ns | ||||
| tf | 24 ns |