Power Bipolar Transistors Datasheets

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
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Power Bipolar Transistors Datasheets From:
Headquarters
Nexperia B.V.
Netherlands
Richardson RFPD
United States
Rochester Electronics
United States
Allegro MicroSystems Inc.
United States
Infineon Technologies AG
Germany
MACOM
Lowell, MA
PUI - Projections Unlimited, Inc.
United States
Twilight Technology Inc.
Anaheim, CA
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
Microchip Technology, Inc.
United States
Motorola Solutions, Inc.
United States
Newark, An Avnet Company
United States
NXP Semiconductors
United States
onsemi
United States
Panasonic
Newark, NJ
Renesas Electronics Corporation
Milpitas, CA
STMicroelectronics, Inc.
United States
STMicroelectronics
Switzerland
WeEn Semiconductors
China