Vincotech GmbH Power IGBT Transistor V23990-P580-A46-PM

Description
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.
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Description
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.
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Suppliers

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Product
Description
Supplier Links
Power IGBT Transistor - V23990P580A46PM - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
V23990P580A46PM
Power IGBT Transistor V23990P580A46PM
flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.

flowPIM 1 3rd gen, 1200V / 35A. Features: 3- rectifier, BRC, Inverter, NTC; Very compact housing, easy to route; IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour; High performance with AIN substrate. Applications: Motor Drives, Power Generation.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number V23990P580A46PM
Product Name Power IGBT Transistor
Package Type flow 1
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