Semikron, Inc. Power IGBT Transistor SKM800GA176D

Description
SEMITRANS® 4 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC inverter drives mains 575-750 V AC Public Transport (auxiliary syst.) Wind power Items are in stock and available for delivery within one week of order
  • Power IGBT Transistor - SKM800GA176D - Richardson RFPD
    Richardson RFPD
  • Igbt, Module, N-Ch, 1.7Kv, 830A; Transistor Polarity Semikron - 15AC8660 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
SEMITRANS® 4 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC inverter drives mains 575-750 V AC Public Transport (auxiliary syst.) Wind power Items are in stock and available for delivery within one week of order
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM800GA176D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM800GA176D
Power IGBT Transistor SKM800GA176D
SEMITRANS® 4 Trench IGBT Modules Features Homogenous Si Trench = Trenchgate technology Vce(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Ic Typical Applications AC inverter drives mains 575-750 V AC Public Transport (auxiliary syst.) Wind power Items are in stock and available for delivery within one week of order

SEMITRANS® 4 Trench IGBT Modules

Features

  • Homogenous Si
  • Trench = Trenchgate technology
  • Vce(sat) with positive temperature coefficient
  • High short circuit capability, self limiting to 6 x Ic

Typical Applications

  • AC inverter drives
  • mains 575-750 V AC
  • Public Transport (auxiliary syst.)
  • Wind power

Items are in stock and available for delivery within one week of order

Supplier's Site
Igbt, Module, N-Ch, 1.7Kv, 830A; Transistor Polarity Semikron - 15AC8660 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Module, N-Ch, 1.7Kv, 830A; Transistor Polarity Semikron
15AC8660
Igbt, Module, N-Ch, 1.7Kv, 830A; Transistor Polarity Semikron 15AC8660
IGBT, MODULE, N-CH, 1.7KV, 830A; Transistor Polarity:N Channel; DC Collector Current:830A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case RoHS Compliant: Yes

IGBT, MODULE, N-CH, 1.7KV, 830A; Transistor Polarity:N Channel; DC Collector Current:830A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM800GA176D 15AC8660
Product Name Power IGBT Transistor Igbt, Module, N-Ch, 1.7Kv, 830A; Transistor Polarity Semikron
Package Type Semitrans 4 TO-3
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