Richardson RFPD RF Schottky Diode MA4E2054L-1261

Description
Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004"""" gold bond pads and sturdy construction.
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Description
Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004"""" gold bond pads and sturdy construction.
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Suppliers

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RF Schottky Diode - MA4E2054L-1261 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
MA4E2054L-1261
RF Schottky Diode MA4E2054L-1261
Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004"""" gold bond pads and sturdy construction.

Single Diode Configuration: The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004"""" gold bond pads and sturdy construction.

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Technical Specifications

  Richardson RFPD
Product Category RF Diodes
Product Number MA4E2054L-1261
Product Name RF Schottky Diode
Configuration Single
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