Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H AIMDQ75R025M2H

Description
The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications. Summary of Features 100% avalanche tested Best‑in‑class RDS(on) x Qfr Excellent RDS(on) x Qoss & RDS(on) x QG Unique low Crss/Ciss & high VGS(th) Improved package interconnect with .XT Driver source pin available Benefits Enhanced robustness and reliability Superior efficiency in hard switching Higher switching frequency Robustness against parasitic turn on Best‑in‑class thermal dissipation Reduced switching losses Potential Applications HV‑LV DCDC converters On-board Chargers Circuit breakers (HV battery disconnect switch, DC and AC low frequency switch, HV E‑fuse)
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H - AIMDQ75R025M2H - Infineon Technologies AG
    Infineon Technologies AG
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Description
The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications. Summary of Features 100% avalanche tested Best‑in‑class RDS(on) x Qfr Excellent RDS(on) x Qoss & RDS(on) x QG Unique low Crss/Ciss & high VGS(th) Improved package interconnect with .XT Driver source pin available Benefits Enhanced robustness and reliability Superior efficiency in hard switching Higher switching frequency Robustness against parasitic turn on Best‑in‑class thermal dissipation Reduced switching losses Potential Applications HV‑LV DCDC converters On-board Chargers Circuit breakers (HV battery disconnect switch, DC and AC low frequency switch, HV E‑fuse)
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Datasheet
Datasheet Summary
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The AIMDQ75R025M2H is a 750 V Silicon Carbide MOSFET designed for automotive applications, featuring a PG-HDSOP-22 package measuring 15.30 to 15.50 mm in length and 14.90 to 15.10 mm in width. It has a typical drain-source on-state resistance of 25 mΩ, a maximum pulsed drain current of 242 A, and a total gate charge of 49 nC. The device is 100% avalanche tested, supports operation up to a junction temperature of 200 °C for up to 100 hours, and meets AEC-Q101 qualification standards. It includes a driver source pin to enhance robustness against parasitic turn-on and features low switching losses with an output energy of 18.5 μJ at 500 V.

Datasheet Summary
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The AIMDQ75R025M2H is a 750 V Silicon Carbide MOSFET designed for automotive applications, featuring a PG-HDSOP-22 package measuring 15.30 to 15.50 mm in length and 14.90 to 15.10 mm in width. It has a typical drain-source on-state resistance of 25 mΩ, a maximum pulsed drain current of 242 A, and a total gate charge of 49 nC. The device is 100% avalanche tested, supports operation up to a junction temperature of 200 °C for up to 100 hours, and meets AEC-Q101 qualification standards. It includes a driver source pin to enhance robustness against parasitic turn-on and features low switching losses with an output energy of 18.5 μJ at 500 V.

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Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H - AIMDQ75R025M2H - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H
AIMDQ75R025M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H AIMDQ75R025M2H
The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications. Summary of Features 100% avalanche tested Best‑in‑class RDS(on) x Qfr Excellent RDS(on) x Qoss & RDS(on) x QG Unique low Crss/Ciss & high VGS(th) Improved package interconnect with .XT Driver source pin available Benefits Enhanced robustness and reliability Superior efficiency in hard switching Higher switching frequency Robustness against parasitic turn on Best‑in‑class thermal dissipation Reduced switching losses Potential Applications HV‑LV DCDC converters On-board Chargers Circuit breakers (HV battery disconnect switch, DC and AC low frequency switch, HV E‑fuse)

The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.


Summary of Features

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • Improved package interconnect with .XT
  • Driver source pin available

Benefits

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses

Potential Applications

  • HV‑LV DCDC converters
  • On-board Chargers
  • Circuit breakers (HV battery disconnect switch, DC and AC low frequency switch, HV E‑fuse)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number AIMDQ75R025M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R025M2H
Polarity N-Channel; N
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