The 2N6798 is a 200 V, 5.5 A N-channel enhancement mode MOSFET in a TO-205 AF (TO-39) package, designed for military-grade switching applications such as power supplies, motor controls, and pulse circuits. It has a static drain-to-source on-state resistance of 0.40 Ω at 10 V gate-source voltage and 3.5 A drain current, and a maximum power dissipation of 25 W. The device operates with a junction temperature range of -55 °C to 150 °C, features a gate-source voltage rating of ±20 V, and meets MIL-PRF-19500/557 qualification standards. Thermal resistance from junction to case is 5.0 °C/W, and case-to-sink thermal resistance is 0.21 °C/W with a greased mounting surface.
Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39 Product overview: 2N6798 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N6798 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-2N6798 |
| Product Name | 200V 5.5A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
