Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF9Z34N AUIRF9Z34N

Manufacturer: Infineon Technologies
Win Source Part Number: 1020734-AUIRF9Z34N
Categories: Uncategorized
Status: Active
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

AUTOMOTIVE HEXFET P CHANNEL

MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC

AUIRF9Z34 - 20V-150V P-Channel Automotive MOSFET

AUIRF9Z34 - 20V-150V P-Channel Automotive MOSFET

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = P
Maximum Continuous Drain Current = 19 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 100 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = P
Maximum Continuous Drain Current = 19 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 100 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = P
Maximum Continuous Drain Current = 19 A
Maximum Drain Source Voltage = 55 V
Maximum Drain Source Resistance = 100 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-220AB
Mounting Type = Through Hole
Pin Count = 3

P-Channel 55V 19A (Tc) 68W (Tc) Through Hole TO-220AB