Infineon Technologies AG MOSFET 2N7002H6327XT

Description
MOSFET N-Ch 60V 300mA SOT-23-3
Description
MOSFET N-Ch 60V 300mA SOT-23-3
Datasheet
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N-channel MOSFET in PG-SOT-23 package with a 60 V drain-source breakdown voltage, 0.3 A continuous drain current, and 3 Ω maximum on-state resistance at VGS=10 V. It is avalanche rated with 1.3 mJ single-pulse energy, logic level gated for operation at VGS=4.5 V, and meets RoHS and halogen-free IEC61249-2-21 standards. Operating and storage temperature range is -55 to 150 °C.

Datasheet Summary
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N-channel MOSFET in PG-SOT-23 package with a 60 V drain-source breakdown voltage, 0.3 A continuous drain current, and 3 Ω maximum on-state resistance at VGS=10 V. It is avalanche rated with 1.3 mJ single-pulse energy, logic level gated for operation at VGS=4.5 V, and meets RoHS and halogen-free IEC61249-2-21 standards. Operating and storage temperature range is -55 to 150 °C.

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Sheung Wan, Hong Kong
MOSFET N-Ch 60V 300mA SOT-23-3

MOSFET N-Ch 60V 300mA SOT-23-3

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2N7002H6327XT
Product Name MOSFET
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