The AIMW120R045M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.
The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.
Summary of Features
Revolutionary semiconductor material - Silicon Carbide
Very low switching losses
Threshold-free on state characteristic
IGBT-compatible driving voltage (15V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification
Temperature independent turn-off switching losses
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential Applications
On-board Charger/PFC
Booster/DC-DC Converter
Auxilliary Inverter
eFuse
Battery Disconnect
Applications
Automotive 48 V battery management system (BMS)
Automotive high-voltage e-compressor
Automotive secondary power distribution unit
Electric vehicle (EV) drivetrain system
On-board charging (OBC) for electric vehicles
The AIMW120R045M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.
The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.
Summary of Features
- Revolutionary semiconductor material - Silicon Carbide
- Very low switching losses
- Threshold-free on state characteristic
- IGBT-compatible driving voltage (15V for turn-on)
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- Commutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
Potential Applications
- On-board Charger/PFC
- Booster/DC-DC Converter
- Auxilliary Inverter
- eFuse
- Battery Disconnect
Applications
- Automotive 48 V battery management system (BMS)
- Automotive high-voltage e-compressor
- Automotive secondary power distribution unit
- Electric vehicle (EV) drivetrain system
- On-board charging (OBC) for electric vehicles
